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FMBM5551 반도체 회로 부품 판매점

NPN General Purpose Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
FMBM5551 데이터시트, 핀배열, 회로
FMBM5551
NPN General Purpose Amplifier
• This device has matched dies
• Sourced from process 16.
• See MMBT5551 for characteristics
April 2005
www.DataSheet4U.com
C2
E1
C1
B2
E2
pin #1 B1
SuperSOTTM-6
Mark: .3S2
Dot denotes pin #1
Absolute Maximum Ratings *
Symbol
Parameter
Value
VCEO
VCBO
VEBO
IC
PC
TJ
TSTG
TθJA
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
* Pd total, for both transistors. For each transistor, Pd = 350mW
160
180
6
600
0.7
150
-55 ~ 150
180
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Off Characteristics
BVCEO
BVCBO
BVEBO
ICBO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
hFE1
DIVID1
hFE2
DIVID2
DC Current Gain
Variation Ratio of hFE1 Between Die 1 and Die 2
DC Current Gain
Variation Ratio of hFE2 Between Die 1 and Die 2
IC = 1mA, IB = 0
IC = 100µA, IE = 0
IC = 10µA, IC = 0
VCB = 120V
VCB = 120V, Ta = 100°C
VEB = 4V
VCE = 5V, IC = 1mA
hFE1(Die1)/hFE1(Die2)
VCE = 5V, IC = 10mA
hFE2(Die1)/hFE2(Die2)
Units
V
V
V
mA
W
°C
°C
°C/W
Min. Max Units
160
180
6
50
50
50
V
V
V
nA
µA
nA
80
0.9
80
0.95
1.1
250
1.05
©2005 Fairchild Semiconductor Corporation
FMBM5551 Rev. D
1
www.fairchildsemi.com


FMBM5551 데이터시트, 핀배열, 회로
Electrical Characteristics (Continued) TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
hFE3
DIVID3
VCE(sat)
DC Current Gain
Variation Ratio of hFE3 Between Die 1 and Die 2
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
DEL
Difference of VBE(on) Between Die1 and Die 2
Small Signal Characteristics
VCE = 5V, IC = 50mA
hFE3(Die1)/hFE3(Die2)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
VCE = 5V, IC = 10mA
VBE(on)(Die1)-VBE(on)(Die2)
www.DataSheet4U.coCmob
Cib
fT
NF
hfe
Output Capacitance
Input Capacitance
Current Gain Bandwidth Product
Noise Figure
Small Signal Current Gain
VCB = 10V, f = 1MHz
VCB = 0.5V, f = 1MHz
VCE = 10V, IC = 10mA, f = 100MHz
VCE = 5V, IC = 200µA, f = 1MHz,
RS = 20K, B = 200Hz
VCE = 10V, IC = 1.0mA, f = 1.0KHz
Min.
30
0.9
-8
100
50
Max Units
1.1
0.15
0.2
1
1
1
8
V
V
V
V
V
mV
6 pF
20 pF
300 MHz
8 dB
250
FMBM5551 Rev. D
2 www.fairchildsemi.com




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FMBM5551 amplifier

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FMBM5551

NPN General Purpose Amplifier - Fairchild Semiconductor