|
|
PDF iT2001P Data sheet ( Hoja de datos )
| Número de pieza | iT2001P | |
| Descripción | 1 to 20 GHz medium gain high-power amplifier | |
| Fabricantes | Iterra | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de iT2001P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
Description
www.DataSheet4U.com
iT2001P
1 to 20 GHz Medium Gain
High-Power Amplifier
The iT2001P is a broadband packaged amplifier designed for high output power
applications. It provides saturated output power of 1 W up to 7 GHz and greater than 29
dBm up to 14 GHz. Typical gain of 13 dB is provided across the bandwidth. DC power
consumption of 5.4 W is obtained in bias condition for best output power and good linear
performance. Input and output ports are DC coupled. The iT2001P is fabricated using
pHEMT technology with MBE, Ti-Pt-Au gate metallization, silicon nitride passivation, and
polymide for scratch protection. Full passivation of the active area and above air bridges
provides very high reliability. The package base is made of copper to minimize thermal
resistance while also ensuring compatibility between materials. The feedthroughs are
realized on a ceramic frame to achieve excellent broadband performance.
Features
Bandwidth: 1 GHz – 20 GHz
Psat (1 GHz – 7 GHz): 30 dBm nominal
Psat (7 GHz – 14 GHz): > 29 dBm nominal
Psat (14 GHz – 20 GHz): > 26 dBm nominal
Gain: 13 dB nominal
DC bias conditions: 9 V at 600 mA
Ceramic flange-mount package
Absolute
Maximum
Ratings
(1. Combination of
positive supply
voltage and
supply current per
stage (Vd1 x Id1)
shall not exceed
50% of maximum
total power
dissipation (5 W)
Symbol
Vd1
Vd2
Vg21 and Vg22
Vd1- Vg11
Vd2 - Vg12
Vg11
Id1
Id2
Ig1
Pin
Pdiss_DC
Tch
Tm
Tst
Parameters/conditions
Power supply voltage first stage (1)
Positive supply voltage second stage (1)
Positive supply voltage (gate)
Gate to drain voltage
Gate to drain voltage
Negative supply voltage
Positive supply current first stage (1)
Positive supply current second stage (1)
Negative supply current
RF input power
Total DC power dissipation (no RF)
Operating channel temperature
Mounting temperature (30 s)
Storage temperature
Min.
-3
-2
-65
Max.
11
11
5
12
12
0
800
800
3.2
21
10
150
320
150
Units
V
V
V
V
V
mA
mA
mA
dBm
W
°C
°C
°C
www.iterrac.com
This is a Production data sheet. See “Product Status Definitions”
on Web site or catalog for product development status.
Nov. 11, 2004, Doc.1176 Rev 3.3
Page 1
iTerra Communications
2400 Geng Road, Ste. 100, Palo Alto, CA 94303
Phone (650) 424-1937, Fax (650) 424-1938
1 page  
Performance
Characteristics
www.DataSheet4U.com
iT2001P
1 to 20 GHz Medium Gain
High-Power Amplifier
iT2001P Gain Performance
32
29
26
23
20
17
14
11
8
5
2
-1
-4
-7
-10
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Freq. (GHz)
iT2001P Return Loss Performance
10
5
0
-5
-10
-15
-20
-25
-30
-35 S11
-40 S22
-45
-50
0 2 4 6 8 10 12 14 16 18 20 22 24
Freq. (GHz)
Biasing
Procedure
iT2001P Isolation
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Freq. (GHz)
iT2001P Power Performance
42
40
38 P1dB
36 P3dB
34
32
30
28
26
24
22
20
18
16
14
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20
Freq. (GHz)
The iT2001P amplifier is biased with two positive drain supplies (Vd1 and Vd2) and one
negative gate supply (Vg11 ). The bias Vg11 controls the drain current of two independent
cascaded stages. The recommended bias condition for the iT2001P is Vd1= Vd2 = 9.0 V,
IDQ1 = 300 mA and IDQ2 = 300 mA . To achieve this drain current level, Vg11 is typically
biased between –0.7 V and –0.9 V.
Vd1 and Vd2 must be isolated by the bias supply by means of bypass capacitors of 100 µF.
These two biases can be applied independently. The gate voltage (Vg11 ) MUST be
applied prior to the drain voltages (Vd1 and Vd2) during power up and removed after the
drain voltage is removed during the power down. Vg21 and Vg22 are two positive voltage
applied to the gate of a cascode configuration of two different gain stages. For normal
operation an external bias of Vg21 and Vg22 = +4 V are required (Vd1,2 =9 V, Vg11=-0.7 V).
The iT2001P is DC coupled at both RF input and output ports.
Handling
and
Mounting
Thin gold solder is recommended for circuit board mounting. The device is susceptible to
electrostatic discharge, so preventive measures should be taken during handling and
mounting to avoid damage to the chip.
www.iterrac.com
This is a Production data sheet. See “Product Status Definitions”
on Web site or catalog for product development status.
Nov. 11, 2004, Doc.1176 Rev 3.3
Page 5
iTerra Communications
2400 Geng Road, Ste. 100, Palo Alto, CA 94303
Phone (650) 424-1937, Fax (650) 424-1938
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet iT2001P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| iT2001P | 1 to 20 GHz medium gain high-power amplifier | Iterra |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |