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Número de pieza | iT2009 | |
Descripción | Power Amplifier | |
Fabricantes | gigoptix | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de iT2009 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! iT2009
2 – 26.5 GHz High-Gain, High-Power Amplifier
Description
Features
www.DataSheet4U.com
The iT2009 is a broadband GaAs MMIC traveling wave amplifier designed for high output
power applications where high gain performance is also required. The iT2009 provides
saturated output power of 1 W up to 7 GHz and greater than 29 dBm up to 15 GHz. High gain
of 20 dB with flatness of +/-1 dB is provided up to 26.5 GHz. DC power consumption as low as
5.4 W is obtained by biasing for best output power and good linear performance. Input-output
DC block capacitors are integrated on-chip.
¾ Frequency range: 2 GHz – 26.5 GHz
¾ Psat (2 GHz – 7 GHz): 30 dBm
¾ Psat (7 GHz – 15 GHz): 29 dBm
¾ Psat (15 GHz – 26.5 GHz): 25 dBm
¾ Gain with +/-1dB flatness: 20 dB
¾ DC power consumption: 5.4 W
¾ DC bias conditions: 9 V at 600 mA
¾ Full chip passivation for high reliability
VGG1
IN OUT
VGG2
VDD
Absolute
Ratings
Symbol Parameters/conditions
VDD
Positive supply voltage
VGG1,2
Negative supply voltage
IDQ DC positive supply current
IGG1,2
Negative supply current
Pin RF input power
Pdiss_DC DC power dissipation (no RF)
Tch Operating channel temperature
Tm Mounting temperature (30 s)
Tst Storage temperature
Min.
-2
-65
Max.
11
0
1300
1.6
17
10
150
320
150
Units
V
V
mA
mA
dBm
W
°C
°C
°C
Recommended
Operating
Conditions
Symbol
Tb
VDD
VGG1
VGG2
IDQ
Parameters/conditions
Operating temperature range (back side)
Positive bias spply
Negative bias spply
Negative bias supply
DC supply drain current
Min. Typ. Max. Units
-40 85 oC
9V
-0.4 -0.6 -0.9
V
-0.4 -0.6 -0.9
V
600 750 mA
For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937,
1
1 page iT2009
2 – 26.5 GHz High-Gain, High-Power Amplifier
Performance
Data
T = 25o C
www.DataSheet4U.com
Saturated Power, VDD=9V, IDQ=600mA
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
2 4 6 8 10 12 14 16 18 20 22 24 26
Freq. (GHz)
P1dB, VDD=9V, IDQ=600mA
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
2 4 6 8 10 12 14 16 18 20 22 24 26
Freq. (GHz)
P1dB vs. VDD, IDQ=600mA
35
34
33
32
31 VDD=9V
30
29
28
27
26
25
24
VDD=8V
23
22
21
20
2 4 6 8 10 12 14 16 18 20 22 24 26
Freq. (GHz)
Output Third Order Intercept Point
VDD=9V, IDQ=600mA
62
59
56
53
50
47
44
41
38
35
32
29
26
23
20
2 4 6 8 10 12 14 16 18 20 22 24 26
Freq. (GHz)
* Measured data includes effect of two parallel RF input/output bond wires
For pricing, delivery, and ordering information, please contact GigOptix at (650) 424-1937,
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet iT2009.PDF ] |
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