RF6100-1 반도체 회로 부품 판매점
LINEAR POWER AMPLIFIER MODULE
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 RF Micro Devices |
www.DataSheet4U.com
RF6100-1
0
RoHS Compliant & Pb-Free Product
Typical Applications
3V 900MHZ LINEAR POWER
AMPLIFIER MODULE
• 3V CDMA/AMPS Cellular Handset
• Spread-Spectrum System
• 3V CDMA20001/X Cellular Handset
Product Description
The RF6100-1 is a high-power, high-efficiency linear
amplifier module specifically designed for 3V handheld
systems. The device is manufactured on an advanced
third generation GaAs HBT process, and was designed
for use as the final RF amplifier in 3V IS-95/CDMA 2000
1X/AMPS handheld digital cellular equipment, spread-
spectrum systems, and other applications in the 824MHz
to 849MHz band. The RF6100-1 has a digital control line
for low power applications to lower quiescent current. The
device is self-contained with 50Ω input and output that is
matched to obtain optimum power, efficiency and linear-
ity. The module is a 4mmx4mm land grid array with back-
side ground. The RF6100-1 is footprint compatible with
industry standard 4mmx4mm CDMA modules, and
requires only one decoupling capacitor.
4.00
1 ± 0.10
1.40
1.25
4.00
± 0.10
0.450
± 0.075
3.900 TYP
2.425
2.200
1.800
1.525
1.350
0.950
0.500 TYP
0.100 TYP
0.000
R0.20 TYP
1 3.549
3.500
3.050
2.650
2.400 TYP
2.200
1.800
1.650
1.350
0.950
0.725
0.125
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VREG 1
VMODE 2
GND 3
RF IN 4
VCC1 5
Bias
10 GND
9 GND
8 RF OUT
7 GND
6 VCC2
Package Style: Module (4mmx4mm)
Features
• Input/Output Internally Matched@50Ω
• 28dBm Linear Output Power
• 40% Peak Linear Efficiency
• -50dBc ACPR @ 885kHz
• 29dB Linear Gain
• 53% AMPS Efficiency
Ordering Information
RF6100-1
3V 900MHz Linear Power Amplifier Module
RF6100-1PCBA-41X Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A1 050929
2-689
RF6100-1
Absolute Maximum Ratings
Parameter
Supply Voltage (RF off)
Supply Voltage (POUT≤31dBm)
Control Voltage (VREG)
Input RF Power
Mode Voltage (VMODE)
Operating Temperature
Storage Temperature
Rating
+8.0
+5.2
+4.2
+10
+3.5
-30 to +110
-40 to +150
Unit
V
V
V
dBm
V
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
High Power Mode
(VMODE Low)
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Linear Efficiency
Maximum ICC
ACPR @ 885kHz
ACPR @ 1.98MHz
Input VSWR
Stability in Band
Stability out of Band
Noise Power
Low Power Mode
(VMODE High)
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Maximum ICC
ACPR @885kHz
ACPR @1.98MHz
Input VSWR
Output VSWR Stability
Specification
Min.
Typ.
Max.
824 849
27 29
-35
-40
28
35 40
465 530
-50 -46
-58 -55
2:1
6:1
10:1
-133
824 849
24 26
-35
-40
18
135
-50 -46
-60 -56
2:1
6:1
10:1
Unit Condition
MHz
dB
dBc
dBc
T=25oC Ambient, VCC=3.4V, VREG=2.8V,
VMODE=0V, and POUT=28dBm for all
parameters (unless otherwise specified).
%
mA
dBc
dBc
dBm/Hz
MHz
dB
dBc
dBc
No oscillation>-70dBc
No damage
At 45MHz offset.
T=25oC Ambient, VCC=3.4V, VREG=2.8V,
VMODE=2.8V, and POUT=18dBm for all
parameters (unless otherwise specified).
mA POUT=16dBm
dBc
dBc
No oscillation>-70dBc
No damage
2-690
Rev A1 050929
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RF6100-1 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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