파트넘버.co.kr RF5152 데이터시트 PDF


RF5152 반도체 회로 부품 판매점

LINEAR POWER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF5152 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RF5152
3V TO 3.6V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3 mm x 3 mm
Features
„ Single Power Supply 3.0V to
3.6 V
„ 34dB Typical Small Signal Gain
„ 50Ω Input and Interstage Match-
ing
„ 2400MHz to 2500MHz Fre-
quency Range
„ +18dBm, 2.5%EVM (typ.),
130 mA@VCC = 3.3 V
Applications
„ IEEE802.11b/g/n WLAN Applica-
tions
„ 2.5GHz ISM Band Applications
„ Commercial and Consumer Sys-
tems
„ Portable Battery-Powered Equip-
ment
„ Spread-Spectrum and MMDS
Systems
16 15 14 13
NC 1
12
RF OUT/
VC3
RF IN 2
Match
RF IN 3
NC 4
5
Match
Bias
6
Match
11 RF OUT
10 RF OUT
9 PDETECT
78
Functional Block Diagram
Product Description
The RF5152 is a linear, medium-power, high-efficiency, three-stage amplifier IC
designed specifically for battery-powered WLAN applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 3mmx3mm, 16-pin, QFN with a
backside ground. The RF5152 is designed to maintain linearity over a wide range of
supply voltages and power outputs.
Ordering Information
RF5152
3V to 3.6V, 2.4GHz to 2.5GHz Linear Power Amplifier
RF5152PCBA-41X Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
9GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A10 DS061221
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10


RF5152 데이터시트, 핀배열, 회로
RF5152
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (VREG)
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
Moisture Sensitivity
Rating
-0.5 to +5.0
-0.5 to +3.5
600
+5
-10 to +85
-40 to +150
JEDEC Level 2
Unit
V
VDC
mA
dBm
°C
°C
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Overall
Temperature=+25°C, VCC=3.3V,
VREG=2.8V, Frequency=2450MHz,
pulsed at 1% to 100% duty cycle,
circuit per evaluation board schematic
Frequency
2.40
2.50
GHz IEEE802.11g
IEEE802.11n
Output Power
18 IEEE802.11g modulation, 54Mbit/s, 64QAM,
OFDM modulation
EVM*
2.5 3.3 % RMS, mean
IP3 33 dBm
Gain
32 34 37 dB -11dBm Pin
Gain Variance
1.5 ±dB -15°C to +85°C
Input Impedance
49 50 51 Ω Internally Matched Input and Interstage
Output VSWR
10:1
The PA is stable, no spurs above -43dBm
Power Detector (P_detect)
POUT = 8 dBm
0.2 0.3 VDC
POUT = 18 dBm
0.7
0.9
1.1 VDC
Power Supply
Operating Voltage
3.0 3.3 3.6 V
VREG (Bias) Voltage (VB1/VB2,
2.7
2.8
3.0 VDC
VB3)
Current Consumption
85 130 170 mA RF POUT=+18dBm, VCC=3.3V,
54Mbps OFDM <2.5% EVM
Quiescent Current
VREG (Bias) Current (Total)
Input Return Loss
45 75 105 mA VCC=+3.3VDC; RF In=OFF; VREG OFF
1 2 6 mA VCC=3.3V
-15 -10 dB
Turn-on Time**
300
700
1000
nS Output stable to within 90% of final gain
Notes:
*The EVM specification is obtained with a signal generator that has an EVM floor of less than 0.7%.
**The PA must operate with gated bias voltage input at 1% to 99% duty cycles without any EVM or other parameter degradation.
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A10 DS061221




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