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PDF RF5117C Data sheet ( Hoja de datos )
| Número de pieza | RF5117C | |
| Descripción | LINEAR POWER AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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Typical Applications
• IEEE802.11B WLAN Applications
• IEEE802.11G WLAN Applications
• 2.5GHz ISM Band Applications
RF5117C
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Spread-Spectrum and MMDS Systems
Product Description
The RF5117C is a linear, medium-power, high-efficiency
amplifier IC designed specifically for battery-powered
WLAN applications such as PC cards, mini PCI, and
compact flash applications. The device is manufactured
on an advanced Gallium Arsenide Heterojunction Bipolar
Transistor (HBT) process, and has been designed for use
as the final RF amplifier in 2.5GHz WLAN and other
spread-spectrum transmitters. The device is provided in a
3mmx3mm, 16-pin, leadless chip carrier with a backside
ground. The RF5117C is designed to maintain linearity
over a wide range of supply voltage and power output.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
16 15 14 13
RF IN 1
12 RF OUT
BIAS GND1 2
11 RF OUT
PWR SEN 3
10 RF OUT
PWR REF 4
Bias
9 NC
5678
-A-
3.00 SQ.
0.15 C A
2 PLCS
1.50 TYP
2 PLCS
0.15 C B
1.00
0.85
0.80
0.65
0.05 C
0.05
0.01
2 PLCS
0.15 C B
-B-
1.37 TYP
12°
MAX
-C-
2 PLCS
0.15 C A
2.75 SQ.
Shaded lead is pin 1.
0.60
0.24
TYP
Dimensions in mm.
0.10 M C A B
0.30
0.18
0.45
0.00
4 PLCS
11..6355SQ.
0.23
0.13
4 PLCS
0.50
0.55
0.30
SEATING
PLANE
Package Style: QFN, 16-Pin, 3x3
Features
• Single 3.3V Power Supply
• +30dBm Saturated Output Power
• 26dB Small Signal Gain
• High Linearity
• 1800MHz to 2800MHz Frequency Range
• +17dBm PO, 11G, <3% EVM
Ordering Information
RF5117C
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
RF5117C PCBA Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A5 060517
2-573
1 page  
RF5117C
The RF5117C can be used with an IEEE802.11g modulation with a few modifications. Pin 2 should not be connected to
ground and a 4.7kΩ resistor should be placed on the VREG1 line. This is done on the evaluation board by cutting the
VREG1 trace and placing the resistor on the open line. All other components should not be modified and the IEEE802.11g
schematic should be followed as closely as possible.
Power sensing is implemented with the PWR SEN and PWR REF lines. The outputs of these pins are transistor collec-
tors and need to be pulled up to the supply through a resistor. PWR REF provides an output current proportional to the
output stage bias current, and PWR SEN provides an output current proportional to the total (RF and bias) current of the
output stage. The pull-up resistors convert these currents to voltages, and the voltage difference between these two pins
is proportional to the RF current. See the graph, “VREF-VSENSE versus POUT”, for the response of this signal. This differ-
ence signal can be fed to a power control circuit elsewhere in the end product, or it can be processed at the PA with addi-
tional circuitry and used to adjust the VREG voltage(s) to implement automatic level control. Contact RFMD Sales or
Applications Engineering for additional data and guidance in using this feature.
The RF5117C has primarily been characterized with a voltage on VREG1 and VREG2 of 2.7VDC. However, the RF5117C
will operate from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than
2.7VDC, contact RFMD Sales or Applications Engineering for additional data and guidance.
Rev A5 060517
2-577
5 Page 
RF5117C
EVM versus POUT (11g Tuned PA)
EVM versus POUT (11g Tuned PA)
140
VCC = 3.0V, Gain = 23dB
7.0 140.0
VCC = 3.3V, Gain = 23dB
7.0
120
6.0 120.0
6.0
100
5.0 100.0
5.0
80 Icc(mA)2.4Vreg
Icc(mA)2.5Vreg
Icc(mA)2.6Vreg
Icc(mA)2.7Vreg
60
EVM%2.4Vreg
EVM%2.5Vreg
EVM%2.6Vreg
EVM%2.7Vreg
40
4.0
3.0
2.0
20 1.0
0 0.0
14 14.5 15 15.5 16 16.5 17 17.5 18
POUT (dBm)
80.0 4.0
60.0 3.0
Icc(mA)2.4Vreg
40.0 Icc(mA)2.5Vreg 2.0
Icc(mA)2.6Vreg
Icc(mA)2.7Vreg
20.0
EVM%2.4Vreg
EVM%2.5Vreg
1.0
EVM%2.6Vreg
EVM%2.7Vreg
0.0 0.0
15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0
POUT (dBm)
ICC and Gain for 11b Waveform
in 11g Tuned PA
25 250
25
Gain versus VREG
for 11g Tuned PA
24.5 240 24.5
24 230
24
23.5 220
23.5
23 210
22.5 200 23
22 190
22.5
21.5 180
22
21 Gain (3V, Po=22.5dBm) 170
Gain (3.3V, Po=23dBm)
20.5
Icc (3V, Po=22.5dBm)
160
21.5
Icc (3.3V, Po=23dBm)
20
2.2 2.4 2.6 2.8
3
VREG (V)
150
3.2 3.4
21
2.3
2.4
Evaluation Board with 11g Tuning
2.5 2.6
VREG (V)
Gain- (VCC=3V)
Gain- (VCC=3.3V)
2.7 2.8
Rev A5 060517
2-583
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet RF5117C.PDF ] | |
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