파트넘버.co.kr RF3866 데이터시트 PDF


RF3866 반도체 회로 부품 판매점

HIGH LINEARITY LOW NOISE AMPLIFIER/LINEAR DRIVER



RF Micro Devices 로고
RF Micro Devices
RF3866 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RF3866
WIDE BANDWIDTH, HIGH LINEARITY
LOW NOISE AMPLIFIER/LINEAR DRIVER
Package Style: QFN, 20-Pin, 5mmx5mm
Features
„ Low Noise and High Intercept
Point
„ Adjustable Bias Current
„ Single 2.5V to 6.0V Power
Supply
„ 700MHz to 3800MHz Opera-
tion
„ QFN20, 5mmx5mm Package
Applications
„ First Stage WiMAX LNA/Lin-
ear Driver
„ CDMA, PCS, ECS, UMTS LNA
„ WLAN LNA
„ High Gain Linear Amplifica-
tion
20 19 18 17 16
NC 1
15 NC
NC 2
14 NC
RF IN 3
13 RF OUT
NC 4
12 NC
AC GND1 5
11 AC GND2
6 7 8 9 10
Functional Block Diagram
Product Description
The RF3866 is a low noise amplifier with a high output IP3. The amplifier
is self-biased from a single voltage supply with 50Ω input and output
ports. The useful frequency range is from 700MHz to 3800MHz. A 0.8dB
noise figure and 36dBm OIP3 performance is achieved with a 5V VDD,
180mA. Current can be increased to raise OIP3 while having minimal
effect on noise figure. The IC is featured in a standard QFN, 20-pin,
5mmx5mm package.
Ordering Information
RF3866
RF3866PCK-410
RF3866PCK-411
Wide Bandwidth, High Linearity Low Noise Amplifier/Linear
Driver
Fully Assembled Evaluation Board with 5 Sample Parts
1.8GHz to 3.8GHz
700MHz to 1100MHz
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
9GaAs pHEMT
GaN HEMT
GaAs MESFET
Si BiCMOS
Si CMOS
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A0 DS070622
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3866 데이터시트, 핀배열, 회로
RF3866
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
Input RF Level (See Note 1)
0 to +7
+10
VDC
dBm
Current Drain, IDD
Operating Ambient Temperature
150 per stage
-40 to +85
mA
°C
Storage Temperature
-40 to +150
°C
Note 1. Max continuous RF IN is +10dBm. The max transient RF IN is
+20 dBm.
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Parameter
High Band
Frequency
Current
Gain
Noise Figure
Output IP3
Output P1dB
S11
S22
S12
Mid Band
Frequency
Current
Gain
Noise Figure
Output IP3
Output P1dB
S11
S22
S12
Low Band
Frequency
Current
Gain
Noise Figure
OIP3
OP1dB
S11
S22
S12
Specification
Min. Typ. Max.
3300
3800
180 220
20
0.8
37
22
-15
-17
-33
1800
28
34
21.0
180
30
0.8
36
22.5
-10
-16
-40
2700
220
32
1.0
25.0
700 1100
180 220
32
0.8
37
22.5
-10
-12
-48
Unit Condition
MHz
mA
dB
dB
dBm
dBm
dB
dB
dB
MHz
mA
dB
dB
dBm
dBm
dB
dB
dB
MHz
mA
dB
dB
dBm
dBm
dB
dB
dB
VDD = 5 V
+25°C, VDD=5V, IDD=180mA, 3500MHz
unless specified
f1=3500MHz, f2=3501MHz
VDD = 5 V
+25°C, VDD=5V, IDD=180mA, 2000MHz
unless specified
f1=2000MHz, f2=2001MHz
VDD = 5 V
+25°C, VDD=5V, IDD=180mA, 850MHz
unless specified
f1=850MHz, f2=851MHz
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A0 DS070622




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