파트넘버.co.kr RF3809 데이터시트 PDF


RF3809 반도체 회로 부품 판매점

GaAs HBT PRE-DRIVER AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF3809 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RF3809
0 GaAs HBT PRE-DRIVER AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• GaAs Pre-Driver for Basestation Amplifiers
• Class AB Operation for NMT, GSM, DCS, PCS,
• PA Stage for Commercial Wireless Infrastructure and UMTS Transceiver Applications
Product Description
The RF3809 is a GaAs pre-driver power amplifier, specifi-
cally designed for wireless infrastructure applications.
Using a highly reliable GaAs HBT fabrication process,
this high-performance single-stage amplifier achieves
high output power over a broad frequency range. The
RF3809 also provides excellent efficiency and thermal
stability through the use of a thermally-enhanced surface-
mount plastic-slug package. Ease of integration is accom-
plished through the incorporation of an optimized evalua-
tion board design provided to achieve proper 50Ω
operation. Various evaluation boards are available to
address a broad range of wireless infrastructure applica-
tions: NMT 450MHz; GSM850MHz; GSM900MHz;
DCS1800MHz; PCS1900MHz; and, UMTS2200MHz.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
VREF 1
NC 2
RFIN 3
NC 4
Bias
Circuit
PACKAGE BASE
GND
8 VBIAS
7 RFOUT/VCC
6 RFOUT/VCC
5 NC
Functional Block Diagram
0.157
0.150
0.0192
0.0138
-A-
0.004
0.002
0.196
0.189
0.050
0.244
0.230
EXPOSED
DIE FLAG
0.066
0.056
Shaded lead is pin 1.
0.126
0.088
8° MAX
0° MIN
0.099
0.061
0.035
0.016
Package Style: SOIC-8
0.0098
0.0075
Features
• High Output Power of 2.0W P1dB
• High Linearity
• High Power-Added Efficiency
• Thermally-Enhanced Packaging
• Broadband Platform Design Approach,
450MHz to 2500MHz
Ordering Information
RF3809
GaAs HBT Pre-Driver Amplifier
RF3809PCK-410
RF3809PCK-411
RF3809PCK-412
RF3809PCK-413
RF3809PCK-414
RF3809PCK-415
Fully Assembled Evaluation Board, 450MHz
Fully Assembled Evaluation Board, 869MHz to 894MHz
Fully Assembled Evaluation Board, 920MHz to 960MHz
Fully Assembled Evaluation Board, 1800MHz to 1880MHz
Fully Assembled Evaluation Board, 1930MHz to 1990MHz
Fully Assembled Evaluation Board, UMTS
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
Rev A3 060607
4-623


RF3809 데이터시트, 핀배열, 회로
RF3809
Absolute Maximum Ratings
Parameter
Supply Voltage
RF - Input Power
Operating Current
Load VSWR
Operating Temperature
Storage Temperature
Rating
9.0
See below
750
4:1
-40 to +85
-40 to +105
Unit
V
mA
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall - 450MHz
Frequency
P1dB
PIN, Maximum
Total Efficiency
Total Power Added Efficiency
Gain (S21)
Second Harmonic (2fo)
Third Harmonic (3fo)
Input Return Loss (S11)
Output Return Loss (S22)
Two-Tone Specification
OIP3
Specification
Min.
Typ.
Max.
420
+32.0
38.0
37.0
14
-32
-38
-20
-6.5
43.0
44.0
44.5
45.0
+33.0
45.0
44.0
13
-27
-36
-16
-5.5
46.5
48.0
50.0
48.0
480
+34.5
24.0
53.0
52.0
12
-19
-30
-11
-4.0
48.0
51.0
53.0
52.0
Unit Condition
MHz
dBm
dBm
%
%
dB
dBc
dBc
dB
dB
dBm
dBm
dBm
dBm
IREF=15mA, VCC=8V, VREF=8V, VBIAS=8V,
Temp = +25°C
@ P1dB
@ P1dB
@ P1dB
@ P1dB
19 dBm/tone
21 dBm/tone
23 dBm/tone
25 dBm/tone
4-624
Rev A3 060607




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