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RF3377 반도체 회로 부품 판매점

GENERAL PURPOSE AMPLIFIER



RF Micro Devices 로고
RF Micro Devices
RF3377 데이터시트, 핀배열, 회로
www.DataSheet4U.com
RF3377
0 GENERAL PURPOSE AMPLIFIER
RoHS Compliant & Pb-Free Product
Typical Applications
• Basestation Applications
• Driver Stage for Power Amplifiers
• Broadband, Low-Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Final PA for Low-Power Applications
• High Reliability Applications
Product Description
The RF3377 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC-biasing
elements to operate as specified.
1.04
0.80
3.10
2.90
0.48
0.36
2 PL
2.60
2.40
Dimensions in mm.
Shaded lead is pin 1.
0.50
0.30
4.60
4.40
1.75
1.40
0.43
0.38
1.60
1.40
1.80
1.45
0.53
0.41
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
4
Package Style: SOT89
Features
• DC to >6000MHz Operation
• Internally Matched Input and Output
• 15.5dB Small Signal Gain
• +25.5dBm Output IP3
• +13dBm Output P1dB
123
Functional Block Diagram
Rev A6 050524
Ordering Information
RF3377
General Purpose Amplifier
RF337XPCBA-410Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-607


RF3377 데이터시트, 핀배열, 회로
RF3377
Absolute Maximum Ratings
Parameter
Input RF Power
Operating Ambient Temperature
Storage Temperature
ICC
Rating
+13
-40 to +85
-60 to +150
60
Unit
dBm
°C
°C
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
Unit
Condition
Overall
Frequency Range
3dB Bandwidth
Gain
15.5
15.0
14.5
Noise Figure
Input VSWR
Output VSWR
Output IP3
Output P1dB
Reverse Isolation
Thermal
ThetaJC
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
Mean Time To Failures
Power Supply
24.5
+24.5
+12.0
+11.5
DC to >6000
4.4
16.7
16.5
15.5
14.5
14.0
13.0
3.0
<2:1
<1.8:1
25.5
+25.5
+13.5
+13.0
19
122
102
77,000
MHz
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dB
°C/W
°C
T=25 °C, ICC=40mA (See Note 1.)
Freq = 500 MHz
Freq = 1000 MHz
Freq = 2000 MHz
Freq = 3000 MHz
Freq = 4000 MHz
Freq = 6000 MHz
Freq = 2000 MHz
In a 50Ω system, DC to 5000MHz
In a 50Ω system, DC to 6000MHz
Freq = 1000 MHz
Freq = 2000 MHz
Freq = 1000 MHz
Freq = 2000 MHz
Freq = 2000 MHz
ICC=40mA, PDISS=135mW. (See Note 3.)
VPIN = 3.38 V
TCASE = +85°C
years
TCASE = +85 °C
With 22Ω bias resistor
Device Operating Voltage
3.65 3.7 V At pin 8 with ICC=40mA
4.5 4.8 V At evaluation board connectors, ICC=40mA
Operating Current
40 60 mA See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3377 must be operated at or below 60mA in order to achieve the thermal performance stated above. Operating at 40mA
will ensure the best possible combination of reliability and electrical performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 60mA over all intended
operating conditions.
4-608
Rev A6 050524




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