RF3158 반도체 회로 부품 판매점
QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS POWER AMPLIFIER MODULE
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 RF Micro Devices |
www.DataSheet4U.com
RF3158
QUAD-BAND GSM/EDGE/GSM850/EGSM900
/DCS/PCS POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Package Style: Module (6mmx6mm)
Features
Linear EDGE and GSM Opera-
tion
PowerStar® GSM/GPRS
Power Control
Digital Band Select Enables a
Single PA Lineup
Single Supply Voltage;
Requires no External Refer-
ence Voltage
Automatic VBATT Tracking Cir-
cuit avoids Switching Tran-
sients at Low Supply Voltage
Low Power Mode for Reduced
EDGE Current
Analog Bias Control allows
External Optimization of
EDGE Current
Compact 6mmx6mm Pack-
age
Applications
Quad-Band GSM/EDGE
Handsets
GSM/EDGE Transmitter Line-
ups
Portable Battery-Powered
Equipment
GSM850/EGSM900/DCS/
PCS Products
GPRS Class 12 Compatible
Products
Mobile EDGE/GPRS Data
Products
HB RFIN 1
BAND SEL 2
TX EN 3
VBATT 4
VMODE 5
VRAMP 6
LB RFIN 7
Integrated Power
Control
18 HB RFOUT
12 LB RFOUT
Functional Block Diagram
Product Description
The RF3158 is a high power, dual-mode amplifier module with integrated
power control. The input and output terminals are internally matched to
50Ω. The amplifier devices are manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is
designed to operate either in saturated mode for GMSK signaling or linear
mode for 8PSK signaling. The module is designed to be the final amplifica-
tion stage in a dual-mode GSM/EDGE mobile transmit lineup operating in
the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands
(such as a cellular handset). Band selection is controlled by an input on
the module which selects either the low or high band. The device is pack-
aged on a 6mmx6mm laminate module with a protective plastic over-
mold.
Ordering Information
RF3158
RF3158PCBA-41X
Quad-Band GSM/EDGE/GSM850/EGSM900 /DCS/PCS
Power Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
9GaAs HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
9GaAs pHEMT
Si CMOS
GaN HEMT
InGaP HBT
SiGe HBT
Si BJT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A2 DS070615
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 26
RF3158
Absolute Maximum Ratings
Parameter
Supply Voltage (VCC)
Power Control Voltage (VRAMP)
Band Select
TX Enable
VMODE
RF - Input Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.5 to +6.0
-0.5 to +3.0
3.0
3.0
3.0
12.0
50
10:1
-20 to +85
-55 to +150
Unit
V
V
V
V
V
dBm
%
°C
°C
Caution! ESD sensitive device.
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Parameter
VRAMP Power Control (GMSK
Mode)
Power Control Range
VRAMP Input Current
VRAMP Bias Control
(8PSK Mode)
High Bias Mode
Low Bias Mode
VRAMP Input Current
VMODE Switch
VMODE “HIGH”
VMODE “LOW”
VMODE Input Current
Band Switch
BAND_SEL “HIGH”
BAND_SEL “LOW”
BAND_SEL Input Current
TX_EN Switch
TX_EN “HIGH”
TX_EN “LOW”
TX_EN Input Current
Overall Power Supply
VCC Range
Off Current
Specification
Min. Typ. Max.
0.30
2.10
40
2.1 2.15
0.4 0.6 2.0
40
1.5
0 0.7
-10 10
1.5
0 0.7
-10 10
1.5
0 0.7
-10 10
3.2 3.6 4.5
3.0 4.8
10
Unit Condition
V
uA VRAMP=VRAMP,MAX
V High Bias Mode
V Low Bias Mode
uA VRAMP=VRAMP,MAX
V 8PSK Mode
V GMSK Mode
uA
V High Band (DCS/PCS)
V Low Band (GSM850/GSM900)
uA
V PA “ON”
V PA “OFF”
uA
V Performance specified
V Functional with performance degraded
uA TX_EN low
2 of 26
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
Rev A2 DS070615
|
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제조업체: RF Micro Devices
( rfmd )
RF3158 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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