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RF Micro Devices |
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RF3145
0 QUAD-BAND GSM/EDGE/GSM850/DCS/PCS
POWER AMPLIFIER MODULE
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• GSM850 and GSM900 Products
• EDGE and GPRS Class 12 Compatible
• DCS/PCS Products
Product Description
The RF3145 is a high power, high efficiency power ampli-
fier module with integrated power control. This module is
self-contained with 50Ω input and output terminals. The
device is manufactured on an advance Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final dual-mode
GMSK/8PSK RF amplifier in GSM, DCS and PCS hand-
held cellular equipment and other applications in the
824MHz to 849MHz, 880MHz to 915MHz, and in the
1710MHz to 1910MHz bands. Internal band select pro-
vides control to select the GSM850/GSM900 or
DCS/PCS band. The device is packaged on ultra-small
LCC, minimizing the required board space.
1 1.70
1.45
10.00±0.10
9.600 TYP
8.800 TYP
8.200 TYP
7.400 TYP
6.800 TYP
6.000 TYP
5.475
4.525
4.000 TYP
3.200 TYP
2.600 TYP
1.800 TYP
1.200 TYP
0.400 TYP
0.000
10.00±0.10
0.450±0.075
1
8.725
6.155
6.100
5.925
5.400 TYP
4.600 TYP
4.075
3.955
1.275
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
9SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
DCS IN 1
BAND SELECT 2
TX ENABLE 3
VBATT 4
VMODE 5
VRAMP 6
GSM IN 7
12
11 DCS OUT
10 NC
9 GSM OUT
8
Functional Block Diagram
Package Style: Module (10mmx10mm)
Features
• Integrated Power Control & Band Select
• Single 3.0V to 4.8V Supply Voltage
• +35.0dBm GSM Output Pwr at 3.5V
• +33dBm DCS/PCS Output Pwr at 3.5V
• +29dBm 8PSK Output Pwr
• 53% GSM and 50% DCS/PCS PAE
Ordering Information
RF3145
Quad-Band GSM/EDGE/GSM850/DCS/PCS Power
Amplifier Module
Power Amplifier Module, 5 Piece Sample Pack
RF3145PCBA-41XFully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A4 050919
2-519
RF3145
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (VRAMP)
Band Select
TX Enable
RF - Input Power
Max Duty Cycle
Output Load VSWR
Operating Case Temperature
Storage Temperature
Rating
-0.3 to +6.0
-0.3 to +1.8
3.0
3.0
12.0
50
10:1
-30 to +90
-55 to +150
Unit
V
V
V
V
dBm
%
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Specification
Min.
Typ.
Max.
GSM US 850MHz Band
Operating Frequency Range
Maximum Output Power
824
+34.5
Total Efficiency (PAE)
Input Power for Max Output
Folding Conversion Gain
45
+2
Output Noise Power
Forward Isolation
Second Harmonic
Third Harmonic
All other Non-Harmonic Spurious
Cross Band Coupling 2F0
Input Impedance
Input VSWR
Output Load VSWR
Output Load Ruggedness
Output Load Impedance
Note: VRAMP,MAX=3/8*VBATT+0.18<1.6V
+35.4
+32.5
51
35
+4
-5
-86
-30
50
6:1
10:1
50
849
0
+6
-84
-25
-5
-7
-36
-20
2.5:1
Unit
MHz
dBm
dBm
dBm
%
%
dBm
dB
dBm
dBm
dBm
dBm
dBm
dBm
Ω
Ω
Condition
Temp=+25 °C, VCC=3.5V, BandSel=Low,
VMODE=Low, VRAMP=VRAMP,MAX,
PIN = +4 dBm
Freq=824MHz to 849MHz, 25% Duty Cycle,
Pulse Width=1154μs, TX EN=High
Temp = 25°C, VCC=3.5V,
VRAMP = VRAMP,MAX
Temp=+85oC, VBATT=3.0V,
VRAMP = VRAMP,MAX
VRAMP = 0.2 V
At POUT,MAX, VCC=3.5V
At POUT=31.5dBm
F0=849MHz, other signal 829MHz at -
40dBm, measured at 869MHz in 100kHz
RBW (Max Power)
RBW=100kHz, 869MHz to 894MHz,
POUT > +5 dBm
TX_ENABLE=0V, VRAMP=0.2, PIN=+6dBm
Over all power levels
Over all power levels
Measured at DCS/PCS port. Over all power
levels.
Over all power levels
Spurious<-36dBm, VRAMP =0.2V to 1.6V,
RBW = 3 MHz
Load impedance presented at RF OUT pad
2-520
Rev A4 050919
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