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PDF MW7IC18100NBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW7IC18100NBR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
www.DataSheet4U.com
The MW7IC18100N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1805 to 2050 MHz. This multi - stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulations including GSM EDGE and CDMA.
Final Application
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 180 mA, IDQ2 = 1000 mA,
PoPuto=we1r00GaWinat—ts
CW, 1805 - 1880
30 dB
MHz
or
1930 - 1990
MHz
Power Added Efficiency — 48%
GSM EDGE Application
•
Typical GSM
800 mA, Pout
E=D4G0EWPaettrsfoArvmga.,n1ce8:0V5 D- 1D8=8028MVHozltosr,
I1D9Q310=- 1291950mMAH,zIDQ2
=
Power Gain — 31 dB
Power Added Efficiency — 35%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 80 dBc
EVM — 1.5% rms
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 100 Watts CW
Output Power
• Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 1 mW to 120 W CW
Pout.
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MW7IC18100N
Rev. 1, 6/2007
MW7IC18100NR1
MW7IC18100GNR1
MW7IC18100NBR1
1990 MHz, 100 W, 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 01
TO - 270 WB - 14
PLASTIC
MW7IC18100NR1
CASE 1621 - 01
TO - 270 WB - 14 GULL
PLASTIC
MW7IC18100GNR1
CASE 1617 - 01
TO - 272 WB - 14
PLASTIC
MW7IC18100NBR1
VDS1
RFin
VGS1
VGS2
Quiescent Current
Temperature Compensation (1)
RFout/VDS2
NC
VDS1
NC
NC
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14 RFout /VDS2
13 RFout /VDS2
Figure 1. Functional Block Diagram
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
1
1 page  
C10
C1
C11
MW7IC18100N
Rev. 2
R1
R2
C16
C2
C17
C12
C14
C13
C3
C6 C7
C15
C5
C8 C9
C4
Figure 4. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1900 MHz
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
5
5 Page 
f = 2040 MHz
Zload
f = 1880 MHz
Zo = 50 Ω
f = 2040 MHz
Zin
f = 1880 MHz
VDD1 = VDD2 = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 W CW
f
MHz
Zin
W
Zload
W
1880
67.48 - j17.89
2.324 - j3.239
1900
60.03 - j20.86
2.234 - j3.105
1920
53.65 - j21.94
2.135 - j2.965
1940
48.13 - j21.94
2.037 - j2.818
1960
43.52 - j21.22
1.936 - j2.666
1980
39.60 - j20.00
1.851 - j2.509
2000
36.14 - j18.52
1.765 - j2.355
2020
33.19 - j16.57
1.669 - j2.193
2040
30.96 - j14.58
1.559 - j2.012
Zin = Device input impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Device
Under Test
Output
Matching
Network
Z in Z load
Figure 25. Series Equivalent Input and Load Impedance — 1900 MHz
RF Device Data
Freescale Semiconductor
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
11
11 Page | ||
| Páginas | Total 30 Páginas | |
| PDF Descargar | [ Datasheet MW7IC18100NBR1.PDF ] | |
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