|
|
PDF XP1006-FA Data sheet ( Hoja de datos )
| Número de pieza | XP1006-FA | |
| Descripción | GaAs MMIC Power Amplifier | |
| Fabricantes | Mimix Broadband | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de XP1006-FA (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
Features
X-Band 10W Power Amplifier
Flange Package
21.5 dB Large Signal Gain
+40.5 dBm Saturated Output Power
37% Power Added Efficiency
100% On-Wafer RF, DC and Output Power Testing
P1006-FA
General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs
packaged power amplifier has a large signal gain of
21.5 dB with a +40.5 dBm saturated output power.
This device uses Mimix Broadband’s 0.5 m GaAs
PHEMT device model technology, and is based upon
optical gate lithography to ensure high repeatability
and uniformity.The device comes in a 10 pin, high
frequency, LCC flange package. The package has a
copper composite base material and a laminated
ceramic substrate.This device is well suited for radar
www.DataSheet4U.com
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+9.0 VDC
Supply Current (Id)
4.5 A
Gate Bias Voltage (Vg)
+0.0 VDC
Input Power (Pin)
TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table1
Channel Temperature (Tch) MTTF Table1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC)
Parameter
Units Min. Typ. Max.
Frequency Range (f )
GHz 8.5
- 11.0
Input Return Loss (S11)1
dB - 15.0 -
Output Return Loss (S22)1
dB - 12.0 -
Large Signal Gain (S21)
dB - 21.5 -
Gain Flatness ( S21)
dB - +/-0.5 -
Reverse Isolation (S12)1
dB - 60.0 -
Saturated Output Power (PSAT)
dBm - +40.5 -
Power Added Efficiency (PAE)
% - 37 -
Drain Bias Voltage (Vd1,2,3)
VDC - +8.0 +9.0
Gate Bias Voltage (Vg)
VDC - -0.6 -
Supply Current (Id) (Vd=8.0V, Vg=-0.6V Typical)
A - 4.0 4.5
(1) Measured on-wafer pre-packaging.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
1 page  
8.5-11.0 GHz GaAs Power Amplifier
Flange, 10 pin
August 2006 - Rev 16-Aug-06
P1006-FA
App Note [1] Biasing - This device is biased with Vd(1,2,3) = 8.0V and 4.0 A (pin 6,10). The drain current is controlled by the gate bias
with a typical value of Vg = -0.6V (pin 1). It is recommended to use active biasing to keep the currents constant as the RF power and
temperature vary; this gives the most reproducible results. The recommended power-up sequence is described below:
1. Apply -2.0 V to Vg
2. Apply +8.0 V to Vd(1,2,3)
3. Adjust Vg to achieve nominal drain current
4. Apply RF power
5. Re-adjust Vg to maintain nominal drain current.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage.
MTTF
MTTF is calculated from accelerated life-time data of single devices and assumes an isothermal back-plate.
1.0E+06
1.0E+05
1.0E+04
1.0E+03
XP1006-FA, MTTF with RF Power Applied
100% DC duty cycle
50% DC duty cycle
30% DC duty cycle
10% DC duty cycle
1.0E+02
1.0E+01
1.0E+00
1.0E-01
20 30 40 50 60 70 80 90 100 110 120
Backplate Temperature (C)
1.0E+05
1.0E+04
1.0E+03
1.0E+02
1.0E+01
XP1006-FA, MTTF without RF Power
100% DC duty cycle
50% DC duty cycle
30% DC duty cycle
10% DC duty cycle
1.0E+00
1.0E-01
1.0E-02
20 30 40 50 60 70 80 90 100 110 120
Backplate Temperature (C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet XP1006-FA.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| XP1006-FA | GaAs MMIC Power Amplifier | Mimix Broadband |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |