파트넘버.co.kr NGA-586 데이터시트 PDF


NGA-586 반도체 회로 부품 판매점

DC-5.5 GHZ CASCADABLE IN GAP /GAAS MMIC AMPLIFIER



Sirenza Microdevices 로고
Sirenza Microdevices
NGA-586 데이터시트, 핀배열, 회로
Product Description
Sirenza Microdevices’ NGA-586 is a high performance InGaP/
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required
for operation.
Gain & Return Loss vs. Freq. @TL=+25°C
24
GAIN
20
IRL
16
12
ORL
0
-10
-20
-30
8 -40
0123456
Frequency (GHz)
NGA-586
DC-5.5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
OBSOLETE
See Application Note AN-059 for Alternates
Product Features
• High Gain : 18.6 dB at 1950 MHz
• Cascadable 50 Ohm
• Patented InGaP Technology
• Operates From Single Supply
• Low Thermal Resistance Package
Applications
• PA Driver Amplifier
• Cellular, PCS, GSM, UMTS
• IF Amplifier
• Wireless Data, Satellite
Symbol
Parameter
Units Frequency Min. Typ. Max.
G Small Signal Gain
850 MHz
17.8 19.8 21.8
dB 1950 MHz
18.6
2400 MHz
17.9
P1dB
Output Power at 1dB Compression
dBm
850 MHz
1950 MHz
18.9
18.5
OIP3 Output Third Order Intercept Point
dBm
850 MHz
1950 MHz
39.6
34.0
Bandwidth Determined by Return Loss (>10dB)
MHz
5500
IRL Input Return Loss
dB 1950 MHz
14.9
ORL Output Return Loss
dB 1950 MHz
19.5
NF Noise Figure
dB 1950 MHz
3.5
VD Device Operating Voltage
V
4.5 4.9
5.4
ID Device Operating Current
mA
72 80 88
RTH, j-l Thermal Resistance (junction to lead)
Test Conditions:
VS = 8v
RBIAS = 39 Ohms
ID = 80mA Typ.
TL = 25ºC
°C/W
121
IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
http://www.sirenza.com
1 EDS-101105 Rev. OBS


NGA-586 데이터시트, 핀배열, 회로
OBSOLETE Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Symbol
Parameter
Unit 100
Frequency (MHz)
500
850
1950
2400
3500
G Small Signal Gain
dB 20.5 20.1 19.8 18.6 17.9 15.5
OIP3 Output Third Order Intercept Point dBm 37.7 38.6 39.6 34.0 32.0 27.4
P1dB Output Power at 1dB Compression dBm 20.1 19.0 18.9 18.5 17.9 13.7
IRL Input Return Loss
dB 29.3 21.3 17.7 14.9 15.4 15.8
ORL Output Return Loss
dB 35.9 33.8 28.7 19.5 19.6
25
S21 Reverse Isolation
NF Noise Figure
Test Conditions:
VS = 8 V
RBIAS = 39 Ohms
dB 22.7
dB 3.7
ID = 80 mA Typ.
TL = 25ºC
22.7 22.6 22.1 21.9 21.1
3.5 3.4 3.5 3.5 3.6
OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
ZS = ZL = 50 Ohms
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.0
Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA
TL=+25ºC
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
45
40
35
30
25
20
15
0
OIP3 vs. Frequency
VD= 4.9 V, ID= 80 mA
TL
+25°C
-40°C
+85°C
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
Absolute Maximum Ratings
Parameter
Absolute Limit
Max. Device Current (ID)
Max. Device Voltage (VD)
Max. RF Input Power
120 mA
6V
+15 dBm
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l
22
20
18
16
14
12
10
0
P1dB vs. Frequency
VD= 4.9 v, ID= 80 mA
TL
+25°C
-40°C
+85°C
0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101105 Rev. OBS




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NGA-586 amplifier

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