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PDF PN3567 Data sheet ( Hoja de datos )
| Número de pieza | PN3567 | |
| Descripción | NPN General Purpose Amplifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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PN3567
NPN General Purpose Amplifier
• This device is for use as a medium amplifier and switch requiring
collector currents up 300mA.
• Sourced from process 19.
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
- Continuous
Operating and Storage Junction Temperature Range
1 TO-92
1. Emitter 2. Base 3. Collector
Value
40
80
5
600
- 55 ~ 150
Units
V
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage *
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics
IC = 30mA, IB = 0
IC = 100µA, IE = 0
IE = 10µA, IC = 0
VCB = 40V, IE = 0
VCB = 40V, IE = 0, TA = 75°C
VEB = 4V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage *
VBE(on) Base-Emitter On Voltage
Small Signal Characteristics
VCE = 1V, IC = 150mA
VCE = 1V, IC = 30mA
IC = 150mA, IB = 15mA
VCE = 1V, IC = 150mA
Cobo
Output Capacitance
Cibo Input Capacitance
* Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2.0%
VCB = 10V, IE = 0
VEB = 0.5V, IC = 0
Min. Typ. Max. Units
40 V
80 V
5V
50 nA
5 µA
25 nA
40 120
40
0.25 V
1.1 V
20 pF
80
©2002 Fairchild Semiconductor Corporation
Rev. A1, November 2002
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet PN3567.PDF ] | |
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