파트넘버.co.kr CGA-3318Z 데이터시트 PDF


CGA-3318Z 반도체 회로 부품 판매점

Dual CATV Broadband High Linearity SiGe HBT Amplifier



Sirenza Microdevices 로고
Sirenza Microdevices
CGA-3318Z 데이터시트, 핀배열, 회로
CGA-3318
Product Description
CGA-3318Z
Pb RoHS Compliant
& Green Package
Sirenza Microdevice’s CGA-3318 is a high performance Silicon Germanium
HBT MMIC Amplifier. Designed with SiGe process technology for excellent
Dual CATV Broadband High Linearity SiGe
linearity at an exceptional price. A Darlington configuration is utilized for HBT Amplifier
broadband performance. The heterojunction increases breakdown
voltage and minimizes leakage current between junctions. The CGA-3318
contains two amplifiers for use in wideband Push-Pull CATV amplifiers
requiring excellent second order performance. The second and third
order non-linearities are greatly improved in the push pull configuration.
Amplifier Configuration
18
27
36
Product Features
Available in Lead free, RoHS compliant, & Green packaging
Excellent CSO/CTB/XMOD Performance at
+34 dBmV Output Power per Tone
Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
5 to 900 MHz operation
45
ELECTRICAL SPECIFICATIONS
Applications
CATV Head End Driver and Predriver Amplifier
CATV Line Driver Amplifier
Symbol
P aram eter
F re q .(M H z )
M in .
Ty p .
Max.
U n its
G
O IP 2
O IP 3
P1dB
S m a ll S ig na l G a in
www.DataSheet4U.com
O utp ut S e c o nd O rd e r Inte rc e p t P o int
To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m
O utp ut Third O rd e r Inte rc e p t P o int
To ne S p a c ing = 1 M H z, P o ut p e r to ne = + 6 d B m
O utp ut P o w e r a t 1 d B G a in C o m p re s sio n
5
50
500
870
50
250
500
50
500
870
50
500
870
1 0 .0
6 7 .0
3 6 .0
1 8 .6
1 3 .2
1 2 .5
1 2 .5
1 2 .0
6 9 .0
7 1 .5
6 9 .0
3 6 .5
3 8 .0
3 8 .0
2 0 .0
2 1 .0
2 0 .6
dB
dBm
dBm
dBm
IR L Inp ut R e turn L o s s
500
5 0 -8 7 0
1 7 .0
10
dB
ORL
O utp ut R e turn L o ss
500
5 0 -8 7 0
1 2 .0
10
dB
NF
CSO
C TB
Noise F igure
B a lun Ins e rtio n L o s s Inc lud e d
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
50
500
870
4 .2
4 .3 d B
5 .0 6 .0
70 dBc
68 dBc
XMOD
W o rs t C a s e O ve r B a nd , 7 9 C h., F la t, +3 4 d B m V
63 dBc
VD
ID
R TH(J-L)
D e vic e O p e ra ting V o lta g e
D e vice O p e ra ting C urre nt
The rm a l R e s is ta nc e (J unc tio n to L e a d )
3 .9
135
4 .1
150
50
4 .3
165
V
mA
°C /W
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this
information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or
granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights
reserved.
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
Broomfield, CO 80021
1
EDS-101993 Rev H


CGA-3318Z 데이터시트, 핀배열, 회로
CGA-3318 Dual SiGe HBT Amplifier
Absolute Maximum Ratings
Parameter
Max Device Current (ID)
Max Device Voltage (VD)
Max. RF Input Power
Max. Junction Temp. (TJ)
Operating Temp. Range (TL)
Max. Storage Temp.
Absolute Limit
225 mA
6V
+18 dBm
+150°C
-40°C to +85°C
+150°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD < (TJ - TL) / RTH, j-l TL=TLEAD
Reliability & Qualification Information
Parameter
Rating
ESD Rating - Human Body Model (HBM)
Class 1B
Moisture Sensitivity Level
MSL 1
This product qualification report can be downloaded at
www.sirenza.com
Caution: ESD sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Typical RF Performance: VS=8V, ID=150mA @ TL=+25°C, RBIAS=51 Ohms, Push-Pull Configuration
Gain vs. Frequency
16
14
12
10
8
6
0
+25°C
-40°C
+85°C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
Input Return Loss vs. Frequency
0
-5
-10
-15
-20 +25°C
-40°C
-25 +85°C
-30
0
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
0
Output Return Loss vs. Frequency
+25°C
-40°C
+85°C
100 200 300 400 500 600 700 800 900 1000
Frequency (MHz)
75 Ohm Push Pull S-parameters are available for download at www.sirenza.com
303 S. Technology Ct.
Broomfield, CO 80021
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-101993 Rev H




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CGA-3318Z amplifier

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CGA-3318

Dual CATV Broadband High Linearity SiGe HBT Amplifier - Sirenza Microdevices



CGA-3318Z

Dual CATV Broadband High Linearity SiGe HBT Amplifier - Sirenza Microdevices