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BCP69 반도체 회로 부품 판매점

PNP General Purpose Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
BCP69 데이터시트, 핀배열, 회로
November 2014
BCP69
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose medium-
power amplifiers and switches requiring collector cur-
rents to 1.0 A. Sourced from process 77.
4
3
2
1 SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
BCP69
Marking
BCP69
Package
SOT-223 4L
Packing Method
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
TJ
TSTG
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Junction Temperature
Storage Temperature Range
Value
-20
-30
-5.0
-1.5
150
-55 to +150
Unit
V
V
V
A
°C
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
www.fairchildsemi.com


BCP69 데이터시트, 핀배열, 회로
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
Max.
1.0
8.0
125
Unit
W
mW/°C
°C/W
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Ccb
hfe
Parameter
Conditions
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Collector-Base Breakdown Voltage IC = -1.0 mA, IE = 0
Emitter-Base Breakdown Voltage IE = -100 μA, IC = 0
Collector-Base Cut-Off Current
VCB = -25 V, IE = 0
VCB = -25 V, IE = 0,
TJ = 150°C
Emitter-Base Cut-Off Current
VEB = -5.0 V, IC = 0
IC = -5 mA, VCE = -1.0 V
DC Current Gain
IC = -500 mA, VCE = -1.0 V
IC = -1.0 A, VCE = -1.0 V
Collector-Emitter Saturation Voltage IC = -1.0 A, IB = -100 mA
Base-Emitter On Voltage
IC = -1.0 A, VCE = -1.0 V
Collector-Base Capacitance
VCB = -10 V, IE = 0,
f = 1.0 MHz
Small-Signal Current Gain
IC = -50 mA, VCE = -10 V,
f = 20 MHz
Min.
-20
-30
-5.0
50
85
60
2.5
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%
Typ.
Max.
-100
-10
-100
375
-0.5
-1.0
30
Unit
V
V
V
nA
μA
nA
V
V
pF
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
2
www.fairchildsemi.com




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BCP69 amplifier

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