BF245A 반도체 회로 부품 판매점
JFET VHF/UHF Amplifiers
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 ON Semiconductor |
www.DataSheet4U.com
ON Semiconductort
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A
BF245B
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Storage Channel Temperature Range
3 DRAIN
Symbol
VDS
VDG
VGS
ID
IG(f)
PD
Tstg
Value
±30
30
30
100
10
350
2.8
–65 to +150
3 DRAIN
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
2
GATE
STYLE 22
1 SOURCE
1
GATE
STYLE 23
2 SOURCE
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0 µAdc, VDS = 0)
Gate–Source
(VDS = 15 Vdc, ID = 200 µAdc)
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
V(BR)GSS
VGS
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
Gate Reverse Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = 15 Vdc, VGS = 0)
BF245(1)
BF245A, BF244A(2)
BF245B, BF244B
BF245C
VGS(off)
IGSS
IDSS
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
Min
30
0.4
0.4
1.6
3.2
–ā0.5
—
2.0
2.0
6.0
12
1
23
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
1
23
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
Typ Max
Unit
— — Vdc
Vdc
— 7.5
— 2.2
— 3.8
— 7.5
— –ā8.0 Vdc
— 5.0 nAdc
mAdc
— 25
— 6.5
— 15
— 25
© Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
Publication Order Number:
BF245A/D
BF245A BF245B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Typ Max Unit
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance
Output Admittance
Forward Transfer Admittance
Reverse Transfer Admittance
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
(VDS = 15 Vdc, VGS = 0, f = 200 MHz)
(VDS = 20 Vdc, –VGS = 1.0 Vdc)
Yfs
Yos
Yfs
Yrs
Ciss
3.0 — 6.5 mmhos
— 40 — mmhos
— 5.6 — mmhos
— 1.0 — mmhos
— 3.0 — pF
Reverse Transfer Capacitance
Output Capacitance
Cut–off Frequency(3)
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
(VDS = 20 Vdc, –VGS = 1.0 Vdc, f = 1.0 MHz)
(VDS = 15 Vdc, VGS = 0)
Crss
Coss
F(Yfs)
— 0.7 — pF
— 0.9 — pF
— 700 — MHz
3. The frequency at which gfs is 0.7 of its value at 1 kHz.
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
30
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
10
bis @ IDSS
gis @ IDSS
gis @ 0.25 IDSS
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
brs @ IDSS
0.25 IDSS
bis @ 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis)
0.1
0.07
0.05
10
20 30
grs @ IDSS, 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 2. Reverse Transfer Admittance (yrs)
20
10
7.0 gfs @ IDSS
5.0
3.0 gfs @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
20 30
50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs)
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
10
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
20 30
50 70 100 200 300 500 7001000
f, FREQUENCY (MHz)
Figure 4. Output Admittance (yos)
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BF245A amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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