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PDF MW6IC2240GNBR1 Data sheet ( Hoja de datos )
| Número de pieza | MW6IC2240GNBR1 | |
| Descripción | RF LDMOS Wideband Integrated Power Amplifiers | |
| Fabricantes | Freescale Semiconductor | |
| Logotipo |  |
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Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW6IC2240N wideband integrated circuit is designed with on -chip
matching that makes it usable from 2110 to 2170 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
•
Typical 2 -Carrier W
210 mA, IDQ2 = 370
-mCAD,MPAouPt =er4fo.5rmWaantctes:AVvDgD.,
=Fu2l8l FVroelqtsu,eInDcQy1
=
Band
(2110 -2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB
@ 0.01% Probability on CCDF.
Power Gain — 28 dB
Power Added Efficiency — 15%
IM3 @ 10 MHz Offset — -43 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -46 dBc in 3.84 MHz Bandwidth
Driver Application
• 3T201yp07i0cmaMAl H2, Iz-DC)Q,aC2rrh=iea3rn2Wn0e-lmCBADa,nMPdAowuPitd=ethr2fo=5rm3d.Ba8mn4c,MeF:HuVzllD,FDPrAe=Rq2u8=enV8co.5yltsdB,BaIDn@dQ1(02=.10110%-
Probability on CCDF.
Power Gain — 29 dB
IM3 @ 10 MHz Offset — -59 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — -62 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 10 W CW
Pout.
• Characterized with Series Equivalent Large -Signal Impedance Parameters
and Common Source Scattering Parameters
• On -Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead -Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW6IC2240N
Rev. 1, 1/2006
MW6IC2240NBR1
MW6IC2240GNBR1
2110 -2170 MHz, 4.5 W AVG., 28 V
2 x W -CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW6IC2240NBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW6IC2240GNBR1
VDS1
GND 1
VDS1
NC
2
3
NC 4
16 GND
15 NC
NC 5
RFin
RFout/VDS2
RFin 6
14 RFout /
VDS2
NC 7
VGS1 Quiescent Current
VGS2 Temperature Compensation
VDS1
VGS1
VGS2
VDS1
GND
8
9
10
11
13 NC
12 GND
(Top View)
Figure 1. Functional Block Diagram
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW6IC2240NBR1 MW6IC2240GNBR1
1
1 page  
VD1
C13
C9
C4 C6
VD2
MW6IC2240, Rev. 1
C3
C1
C8
C2
C11 R1
VG1
C12
R2
VG2
C10
C5 C7
Figure 4. MW6IC2240NBR1(GNBR1) Test Circuit Component Layout
RF Device Data
Freescale Semiconductor
MW6IC2240NBR1 MW6IC2240GNBR1
5
5 Page 
NOTES
RF Device Data
Freescale Semiconductor
MW6IC2240NBR1 MW6IC2240GNBR1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MW6IC2240GNBR1.PDF ] | |
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