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BROADBAND AMPLIFIER



ETC 로고
ETC
MT1110 데이터시트, 핀배열, 회로
www.DataSheet4U.com
M I C R O T U N E™
MT1110 75BROADBAND AMPLIFIER
ADVANCE DATA SHEET
CATV DISTRIBUTION APPLICATIONS
1 APPLICATIONS
Set-top box
Home gateways
CATV Broadband distribution
Cable splitters
Laser drivers
Optical receivers
2 FEATURES
Cascadable 75gain block
15 dB Gain
3 dB Noise figure
Unconditionally stable
20 dB Input return loss
1 MHz to 2000 MHz 3 dB bandwidth
+0.5 dB Gain tilt from 50 MHz to 850 MHz
Typical OIP3 at 70 mA is 80 dBmV at 850 MHz
Single +5V supply
70 mA Current consumption
SOT-89 Package
Industry standard pin-out for drop in compatibility
3 OVERVIEW
The Microtune 1110 (MT1110) broadband amplifier is a 75internally matched
amplifier designed for broadband CATV distribution and infrastructure applications.
The MT1110 is built using high performance silicon-germanium (SiGe) technology
and offers 15 dB gain with an industry best noise figure of 3.0 dB. It achieves a third
order intercept point of 80 dBmV while drawing the industry’s lowest current, 70 mA,
from a single 5V supply.
Specifically designed for cable, data, and video applications, the MT1110 features a
unique integrated equalization circuit that adds 0.5 dB of positive tilt to the gain
slope to compensate for a commonly occurring frequency dependent attenuation
found in broadband applications.
The MT1110’s Darlington circuit topology produces high linearity with very low noise
while maintaining matched input and output impedances. Two AC coupling
capacitors, a bias resistor, and an optional inductor are the only external
components required.
The MT1110 is available in a SOT-89 package for the extended industrial
temperature range of -40°C to +85°C.
DS-00019
Rev 1.1 -- September 2001
Page 1 of 9


MT1110 데이터시트, 핀배열, 회로
MT1110 75BROADBAND AMPLIFIER
ADVANCE DATA SHEET
DC block
In Zo 10 nF 1
Figure 1 Typical Application
CATV DISTRIBUTION APPLICATIONS
Rbias = 10 Ohms
VCC = 5V
1 uH
4
3
DC block
10 nF
VBias = 4.3 V
2
Zo
Out
4 ABSOLUTE MAXIMUM RATING S
Stresses greater than those listed in Table 1 may cause permanent damage to the
device. These are stress ratings only; functional operation of the device under
conditions other than those listed in the operational sections of this document is not
recommended or implied. Exposure to any of the absolute maximum rating
conditions for extended periods of time may affect reliability.
Table 1 Absolute Maximum Stress Ratings
PARAMETER
Device voltage
Device current
RF Input power
Junction temperature
Storage temperature range
Lead temperature (soldering, 10 seconds)
MIN MAX UNIT
-0.7 5
V
100 mA
60 dBmV
+125
°C
-55 +150
°C
+245
°C
5 DC ELECTRICAL CHARACTERIS TICS
Table 2 Recommended Bias Resistor Values
SUPPLY VOLTAGE
RBias at 70 mA
5V 6V
10 24
9V 12V UNIT
67 110
DS-00019
Rev 1.1 — September 2001
Page 2 of 9




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