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PDF RF3300-2 Data sheet ( Hoja de datos )
| Número de pieza | RF3300-2 | |
| Descripción | LINEAR AMPLIFIER MODULE | |
| Fabricantes | RF Micro Devices | |
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Typical Applications
• 3V CDMA/AMPS Cellular Handsets
• 3V CDMA2000/1X Cellular Handsets
• Spread-Spectrum Systems
RF3300-2
3V 900MHz LINEAR AMPLIFIER MODULE
• Designed for Compatibility with Qualcomm
Chipsets
Product Description
The RF3300-2 is a high-power, high-efficiency linear
amplifier module targeting 3V handheld systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS handheld digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849MHz band. The RF3300-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The RF3300-2 con-
tains a temperature compensating bias circuit to improve
performance over temperature.
Optimum Technology Matching® Applied
Si BJT
9GaAs HBT
GaAs MESFET
Si Bi-CMOS
InGaP/HBT
SiGe HBT
Si CMOS
9GaN HEMT
SiGe Bi-CMOS
VCC3 1
GND 2
GND 3
RF IN 4
VCC1 5
12 11
Pwr
Det
Bias
10 PDET_OUT
9 GND
8 GND
7 RF OUT
6 VCC2
Functional Block Diagram
7.375 TYP
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
1
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
0.925 TYP
0.125 TYP
0.000
Dimensions in mm.
Bottom View
Package Style: Module (6mmx7.5mm)
Features
• Single 3V Supply with Internal VREF
• Integrated Power Detect Circuit
• 27dB Linear Gain
• 55mA Idle Current
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
Ordering Information
RF3300-2
3V 900MHz Linear Amplifier Module
RF3300-2 PCBA Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A6 030124
2-539
1 page  
RF3300-2
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
PA_ON
VMODE
VCC3
J1
RF IN
VCC1
C3
2.2 µF
50 Ω µstrip
C1
2.2 µF
1
2
3
4
5
R2
100 kΩ
R3
100 kΩ
12 11
Pwr
Det
Bias
10
9
8
7
6
R1
1 kΩ
C4
10 nF
50 Ω µstrip
C2
2.2 µF
PDET_OUT
J2
RF OUT
VCC2
NOTE:
Resistors R2 and R3 are provided on the evaluation board to protect against power sequencing
issues. (Refer to pin descriptions 11 and 12.) These resistors are not needed when the VCC3 is
connected to the handset battery.
Rev A6 030124
2-543
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet RF3300-2.PDF ] | |
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