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RF LDMOS Wideband Integrated Power Amplifiers



Freescale Semiconductor 로고
Freescale Semiconductor
MW4IC2230GNBR1 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
Typical
60 mA,
Single - Carrier W - CDMA Performance:
IDQ2 = 350 mA, Pout = 5 Watts Avg., f =
2V1D4D0=M2H8 zV,oClths,aInDnQe1l
=
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
BT6y0apnmidcAaw,lidSIDtihnQg2=le=3-.38C54a0rMrmiHeArz,W, PP-oACuRt[email protected],e%f: =VPD2rDo1b4=a02bM8iliHVtyozol,tnsC,ChIDaCQnDn1Fe=.l
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
Pout.
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
200°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Document Number: MW4IC2230N
Rev. 6, 5/2006
MW4IC2230NBR1
MW4IC2230GNBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GNBR1
VRD1
VRG1
VDS2
VDS1
3 Stages IC
GND
VDS2
VRD1
VRG1
VDS1
RFin
1
2
3
4
5
6
16 GND
15
VDS3/
14 RFout
7
RFin
VDS3/RFout
VGS1
VGS2
8
9
VGS3 10
13
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
GND 11
12 GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2230NBR1 MW4IC2230GNBR1
1


MW4IC2230GNBR1 데이터시트, 핀배열, 회로
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Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
Table 2. Thermal Characteristics
VDSS
VGS
Tstg
TJ
Pin
- 0.5, +65
- 0.5, +8
- 65 to +175
200
20
Vdc
Vdc
°C
°C
dBm
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
Stage 1
Stage 2
Stage 3
RθJC
°C/W
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
3 260 °C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps 29 31.5 — dB
Input Return Loss
IRL — - 25 - 10 dB
Adjacent Channel Power Ratio
Pout = 0.4 W Avg.
Pout = 1.26 W Avg.
ACPR
dBc
- 53.5
- 50
— - 52 —
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA,
IDQ3 = 265 mA, 2110 MHz<Frequency <2170 MHz
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Psat
43
W
Quiescent Current Accuracy over Temperature ( - 10 to 85°C) (2)
ΔIQT
±5
%
Gain Flatness in 30 MHz Bandwidth
GF — 0.13 — dB
Deviation from Linear Phase in 30 MHz Bandwidth
Φ ±1 — °
Delay @ Pout = 0.4 W CW Including Output Matching
Part - to - Part Phase Variation
Delay
1.6
ΔΦ ±15 —
ns
°
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2230NBR1 MW4IC2230GNBR1
2
RF Device Data
Freescale Semiconductor




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RF LDMOS Wideband Integrated Power Amplifiers - Freescale Semiconductor