PDF MW4IC001NR4 Data sheet ( Hoja de datos )

Número de pieza	MW4IC001NR4
Descripción	RF LDMOS Wideband Integrated Power Amplifiers
Fabricantes	Freescale Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de MW4IC001NR4 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas
No Preview Available ! www.DataSheet4U.com Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On Chip design makes it usable from 800 MHz to 2170 MHz. The linearity performances cover all modulations for cellular applications: GSM EDGE, TDMA, CDMA and W - CDMA. • Typical CW Performance at 2170 MHz, Output Power — 900 mW PEP 28 Volts, IDQ = 12 mA Power Gain — 13 dB Efficiency — 38% • High Gain, High Efficiency and High Linearity • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • N Suffix Indicates Lead - Free Terminations • In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel. MW4IC001MR4 Rev. 3, 1/2005 MW4IC001NR4 MW4IC001MR4 800 - 2170 MHz, 900 mW, 28 V W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case @ 85°C Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Charge Device Model Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Symbol VDSS VGS PD Tstg TJ Symbol RθJC Value - 0.5, +65 - 0.5, +15 4.58 0.037 - 65 to +150 150 Value 27.3 Class 0 (Minimum) M1 (Minimum) C2 (Minimum) Rating 3 Package Peak Temperature 260 Unit Vdc Vdc W W/°C °C °C Unit °C/W Unit °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.  Freescale Semiconductor, Inc., 2005. All rights reserved. RF Device Data Freescale Semiconductor MW4IC001NR4 MW4IC001MR4 1 1 page www.DataSheet4U.com TYPICAL CHARACTERISTICS - 900 MHz 50 IRL 46 − 15 − 17 42 ηD − 19 38 34 30 26 22 IM3 18 14 Gps VDS = 28 Vdc Pout = 0.9 W (PEP) IDQ = 14 mA Two −Tone Measurement 100 kHz Tone Spacing − 21 − 23 − 25 − 27 − 29 − 31 − 33 10 −35 855 860 865 870 875 880 885 890 895 900 905 f1, FREQUENCY (MHz) Figure 3. Two-Tone Performance versus Frequency 15 Gps 14 ηD 13 12 P1dB 11 10 9 8 VDS = 28 Vdc 7 IDQ = 14 mA f = 880 MHz 6 0 0.2 0.4 0.6 0.8 1.0 1.2 Pout, OUTPUT POWER (WATTS) Figure 4. CW Performance versus Output Power 60 55 50 45 40 35 30 25 20 15 1.4 − 25 − 30 IDQ = 8 mA − 35 10 mA −40 18 mA VDS = 28 Vdc f1 = 880 MHz f2 = 880.1 MHz −45 16 mA − 50 − 55 0.01 14 mA Two −Tone Measurement 12 mA 100 kHz Tone Spacing 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power − 25 −30 VDS = 28 Vdc −35 IDQ = 14 mA f1 = 880 MHz −40 f2 = 880.1 MHz −45 3rd Order − 50 − 55 − 60 − 65 − 70 0.01 5th Order 7th Order 0.1 Two −Tone Measurement 100 kHz Tone Spacing 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power RF Device Data Freescale Semiconductor − 25 − 30 − 35 − 40 −45 1 MHz Tone −50 Spacing = 100 kHz 0.01 0.1 10 MHz VDS = 28 Vdc IDQ = 14 mA f1 = 880 MHz, f2 = f1 + Tone Spacing Two −Tone Measurement 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Third Order Intermodulation Distortion versus Output Power MW4IC001NR4 MW4IC001MR4 5 5 Page www.DataSheet4U.com f = 1920 MHz Zload f = 2000 MHz f = 2000 MHz f = 1920 MHz Zsource Zo = 50 Ω f = 2180 MHz f = 2100 MHz f = 2180 MHz Zload f = 2100 MHz Zsource Zo = 50 Ω VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω 1920 1930 4.238 + j15.142 4.322 + j15.362 7.764 + j28.829 8.056 + j29.352 1940 4.490 + j15.466 8.436 + j29.727 1950 1960 1970 1980 4.605 + j15.711 4.752 + j15.904 4.905 + j16.050 5.071 + j16.236 8.809 + j30.249 9.183 + j30.763 9.598 + j31.213 10.030 + j31.690 1990 5.262 + j16.446 10.546 + j32.237 2000 5.487 + j16.632 11.054 + j32.726 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network VDD = 28 V, IDQ = 12 mA, Pout = 0.9 W PEP f MHz Zsource Ω Zload Ω 2100 2110 2.667 + j12.903 2.671 + j13.070 5.892 + j26.374 6.092 + j26.739 2120 2.664 + j13.224 6.281 + j27.094 2130 2.694 + j13.431 6.540 + j27.510 2140 2.703 + j13.511 6.748 + j27.795 2150 2160 2.702 + j13.700 2.745 + j13.952 6.996 + j28.182 7.300 + j28.678 2170 2.754 + j14.026 7.562 + j28.987 2180 2.784 + j14.206 7.862 + j29.411 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Z source Z load RF Device Data Freescale Semiconductor Figure 23. Series Equivalent Source and Load Impedance MW4IC001NR4 MW4IC001MR4 11 11 Page

Páginas	Total 16 Páginas
PDF Descargar	[ Datasheet MW4IC001NR4.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
MW4IC001NR4	RF LDMOS Wideband Integrated Power Amplifiers	Freescale Semiconductor

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar