MSA-0386 반도체 회로 부품 판매점
Cascadable Silicon Bipolar MMIC Amplifier
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 Hewlett-Packard |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0386
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 2.4 GHz
• 12.0 dB Typical Gain at
1.0 GHz
• 10.0 dBm Typical P1 dB at
1.0 GHz
• Unconditionally Stable
(k>1)
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Surface
Mount Semiconductors”.
Description
The MSA-0386 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in commercial and
industrial applications.
86 Plastic Package
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 5 V
OUT
2
MSA-0386 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
70 mA
400 mW
+13 dBm
150°C
–65 to 150°C
Electrical Specifications[1], TA = 25°C
Thermal Resistance[2,4]:
θjc = 115°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 9.5 mW/°C for TC > 116°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
dB 12.5
10.0 12.0
∆GP Gain Flatness
f = 0.1 to 1.6 GHz dB ±0.7
f3 dB
3 dB Bandwidth
GHz 2.4
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
1.5:1
1.7:1
NF 50 Ω Noise Figure
f = 1.0 GHz
dB 6.0
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
dBm
10.0
IP3 Third Order Intercept Point
f = 1.0 GHz
dBm
23.0
tD Group Delay
f = 1.0 GHz
psec
140
Vd
dV/dT
Device Voltage
Device Voltage Temperature Coefficient
V 4.0
mV/°C
5.0 6.0
–8.0
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0386-TR1
1000
7" Reel
MSA-0386-BLK
100 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
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제조업체: Hewlett-Packard
( hp )
MSA-0386 amplifier
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[ MSA-0386.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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전력반도체 문의 : 010-3582-2743
관련 데이터시트
MSA-0385
Cascadable Silicon Bipolar MMIC Amplifier - Hewlett-Packard
MSA-0386
Cascadable Silicon Bipolar MMIC Amplifier - Hewlett-Packard