파트넘버.co.kr MSA-0136 데이터시트 PDF


MSA-0136 반도체 회로 부품 판매점

(MSA-0135 / MSA-0136) Cascadable Silicon Bipolar MMIC Amplifier



Hewlett-Packard 로고
Hewlett-Packard
MSA-0136 데이터시트, 핀배열, 회로
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
www.DataSheet4U.com
MSA-0135, -0136
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 1.2 GHz
• High Gain:
18.5 dB Typical at 0.5 GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0135 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0136.
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 5 V
OUT
5965-9691E
6-250


MSA-0136 데이터시트, 핀배열, 회로
MSA-0135, -0136 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
40 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance[2,5]:
θjc = 150°C/W
Notes:
www.DataSheet4U1..coPmermanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 170°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate
methods. See MEASUREMENTS section “Thermal Resistance” for more information.
MSA-0135, -0136 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 17 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
GP Gain Flatness
f = 0.1 to 0.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF 50 Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3 Third Order Intercept Point
f = 0.5 GHz
tD Group Delay
f = 0.5 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 18.0
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.5
Typ. Max.
19.0
± 0.6
1.2
1.3:1
1.3:1
5.5
1.5
14.0
160
5.0
–9.0
5.5
Notes:
1. The recommended operating current range for this device is 13 to 25 mA. Typical performance as a function of current
is on the following page.
6-251




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MSA-0136 amplifier

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관련 데이터시트


MSA-0135

(MSA-0135 / MSA-0136) Cascadable Silicon Bipolar MMIC Amplifier - Hewlett-Packard



MSA-0136

(MSA-0135 / MSA-0136) Cascadable Silicon Bipolar MMIC Amplifier - Hewlett-Packard