파트넘버.co.kr MSA-0505 데이터시트 PDF


MSA-0505 반도체 회로 부품 판매점

Cascadable Silicon Bipolar MMIC Amplifier



Hewlett-Packard 로고
Hewlett-Packard
MSA-0505 데이터시트, 핀배열, 회로
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0505
Features
• Cascadable 50 Gain Block
• High Output Power:
18.0 dBm Typical P1 dB at
1.0 GHz
• Low Distortion:
29.0 dBm Typical IP3 at 1.0 GHz
• 7.0 dB Typical Gain at
1.0 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section
“Tape-and-Reel Packaging for
Semiconductor Devices.”
Description
The MSA-0505 is a high perfor-
mance medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) housed
in a low cost, surface mount
package. This MMIC is designed
for use as a general purpose 50
gain block. Typical applications
include narrow and broad band IF
and RF amplifiers in commercial
systems.
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
05 Plastic Package
Typical Biasing Configuration
R bias
VCC > 12 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 8.4 V
OUT


MSA-0505 데이터시트, 핀배열, 회로
2
MSA-0505 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
135 mA
Power Dissipation[2,3]
1.5 W
RF Input Power
+25 dBm
Junction Temperature
200°C
Storage Temperature
–65 to 150°C
Electrical Specifications[1], TA = 25°C
Thermal Resistance[2,4]:
θjc = 85°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 11.8 mW/°C for TC > 73°C.
4. See MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions: Id = 80 mA, ZO = 50
Units Min. Typ. Max.
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
f = 1.0 GHz
dBm
19.0
dBm 16.0 18.0
GP Power Gain (|S21| 2)
f = 0.5 GHz
f = 1.0 GHz
dB 7.5
6.0 7.0
GP
f3 dB
Gain Flatness
3 dB Bandwidth[2]
f = 0.1 to 1.5 GHz
dB ±0.75
GHz 2.3
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
1.6:1
2.0:1
IP3 Third Order Intercept Point
NF 50 Noise Figure
f = 1.0 GHz
f = 1.0 GHz
dBm
dB
29.0
6.5
tD Group Delay
f = 1.0 GHz
psec
190
Vd
dV/dT
Device Voltage
Device Voltage Temperature Coefficient
V 6.7
mV/°C
8.4 10.1
–16.0
Notes:
1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (GP).
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0505-TR1
500
7" Reel
MSA-0505-STR
10
Strip
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.




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MSA-0505 amplifier

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