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Hewlett-Packard |
Agilent MSA-0420
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Description
The MSA-0420 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
high reliability package. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
200 mil BeO Package
Features
• Cascadable 50 Ω Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• 16.0 dBm Typical P1 dB at
1.0 GHz
• Unconditionally Stable
(k>1)
• Hermetic Metal/Beryllia
Microstrip Package
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 6.3 V
OUT
2
MSA-0420 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
120 mA
850 mW
RF Input Power
Junction Temperature
Storage Temperature
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 25 mW/°C for TC > 166°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of qjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 40°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 90 mA, ZO = 50 Ω
GP Power Gain (|S21| 2)
f = 0.1 GHz
∆GP Gain Flatness
f = 0.1 to 2.5 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 7.5
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
14.0
5.7
Typ. Max.
8.5
±0.6
4.3
1.7:1
1.8:1
6.5
16.0
30.0
140
6.3
–8.0
9.5
±1.0
6.9
Note:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
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