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Hewlett-Packard |
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0735, -0736
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
4.0 V Typical Vd
• 3 dB Bandwidth:
DC to 2.4 GHz
• 13.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0735 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
35 micro-X Package[1]
Note:
1. Short leaded 36 package available upon
request.
Typical Biasing Configuration
R bias
VCC > 5 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 4.0 V
OUT
5965-9591E
6-394
MSA-0735, -0736 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
60 mA
Power Dissipation[2,3]
275 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 157°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. Ths small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,5]:
θjc = 155°C/W
Electrical Specifications[1], TA = 25°C
Symbol
GP
∆GP
Parameters and Test Conditions: Id = 22 mA, ZO = 50 Ω
Power Gain (|S21|2)
f = 0.1 GHz
Gain Flatness
f = 0.1 to 1.3 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
NF 50 Ω Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 12.5
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
3.6
Typ. Max.
13.5
± 0.6
2.4
2.0:1
1.8:1
4.5
5.5
19.0
140
4.0
–7.0
14.5
± 1.0
4.4
Note:
1. The recommended operating current range for this device is 15 to 40 mA. Typical performance as a function of current
is on the following page.
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0735
10 Strip
MSA-0736-BLK
100 Antistatic Bag
MSA-0736-TR1
1000
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.
6-395
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