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MSA-3185 반도체 회로 부품 판매점

(MSA-31xx) Cascadable Silicon Bipolar MMIC Amplifier



Hewlett-Packard 로고
Hewlett-Packard
MSA-3185 데이터시트, 핀배열, 회로
Silicon Bipolar RFIC Amplifiers
Technical Data
Features
MSA-3111
• Surface Mount SOT-143
Package
• 3 dB Bandwidth: DC to
0.5 GHz
• 18.4 dB Gain at 1 GHz
• 3.5 dB NF at 1 GHz
MSA-3135
• Hermetic Ceramic Package
• 3 dB Bandwidth: DC to
0.6 GHz
• 19.6 dB Gain at 1 GHz
• 3.2 dB NF at 1 GHz
MSA-3185
• Plastic Microstrip Package
• 3 dB Bandwidth: DC to
0.5 GHz
• 18.7 dB Gain at 1 GHz
• 3.5 dB NF at 1 GHz
MSA-3186
• Surface Mount Plastic
Microstrip Package
• 3 dB Bandwidth: DC to
0.5 GHz
• 18.7 dB Gain at 1 GHz
• 3.5 dB NF at 1 GHz
MSA-3111
MSA-3135
MSA-3185
MSA-3186
MSA-31XX Series
Description
The MSA-31XX series are high
performance silicon bipolar RFIC
amplifiers designed to be
cascadable in 50 systems. The
stability factor of K > 1 contrib-
utes to easy cascading in
numerous narrow and broadband
IF and RF commercial and
industrial applications.
The MODAMP MSA series is
fabricated using a 10 GHz fT,
25 GHz FMAX, silicon bipolar RFIC
process which utilizes nitride self-
alignment, ion implantation, and
gold metallization to achieve
excellent uniformity,
performance, and reliability. The
use of an external bias resistor for
temperature and current stability
also allows bias flexibility.
Package options include, the
industry standard plastic surface
mount SOT-143 package, the
100␣ mil surface mountable
hermetic ceramic package, the
85␣ mil plastic microstripline
package, and the 85 mil surface
mountable plastic microstripline
package.
5965-9664E
6-482


MSA-3185 데이터시트, 핀배열, 회로
Absolute Maximum Ratings[1]
Parameter
MSA-
3111
Device Current
50 mA
Power Dissipation[2,3]
250 mW[3a]
RF Input Power
+13dBm
Junction Temperature
150°C
Storage Temperature -65 to 150°C
MSA-
3135
60 mA
325 mW[3b]
+13dBm
200°C
-65 to 200°C
MSA-
3185, -3186
60 mA
325 mW[3c]
+13dBm
150°C
-65 to 150°C
Typical Biasing
Configuration
R bias
VCC 7 V
DC BLOCK
4
INPUT
MSA
1
2
RF CHOKE
3
Vd = 4.5 V
OUTPUT
Rbias = VCC – Vd
Id
Thermal
Resistance: θjc
500°C/W
155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3a. Derate at 2.0 mW/°C for TC > 25°C.
b. Derate at 6.5 mW/°C for TC > 149°C.
c. Derate at 8.7 mW/°C for TC > 112°C.
115°C/W
Electrical Specifications, TA = 25°C
ID = 29 mA, Zo = 50
Symbol
GP
GP
f3dB
VSWR
Parameters and
Test Conditions
Power Gain
(|S21|2)
f=0.1 GHz
f=0.5 GHz
f=1.0 GHz
Gain Flatness
f = 0.1 to 0.3 GHz
3 dB Bandwidth
Input VSWR
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
MSA-3111
Units Min. Typ. Max.
dB 23.5 24.4
22.4
18.4
dB ± 0.5
GHz 0.5
1.2:1
1.2:1
P1dB
NF
IP3
td
VD
dV/dT
Power Output @
1 dB Gain
Compression:
f=1.0 GHz
50 Noise
Figure
f=1.0 GHz
Third Order
Intercept
Point
f=1.0 GHz
Group Delay
f=1.0 GHz
Device Voltage
TC = 25°C
Device Voltage
Temperature Coefficient
dBm
dB
9.0
3.5
dBm
23
psec
130
V 4.0 4.5
mV/°C
-9.6
6.0
Note: 1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”
6-483
MSA-3135
MSA-3185, -3186
Min. Typ. Max. Min. Typ. Max.
23.5 24.5 26.5 23.5 24.6
22.8 22.3
19.6 18.7
± 0.4 ± 1.0
0.6
± 0.5
0.5
1.2:1
1.2:1
1.2:1
1.4:1
9.3 9.0
3.2 3.5
22 21
130 130
4.5 4.7 5.5 4.0 4.7 6.0
-9.6 -9.6




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MSA-3185 amplifier

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(MSA-31xx) Cascadable Silicon Bipolar MMIC Amplifier - Hewlett-Packard



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