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Hewlett-Packard |
Silicon Bipolar RFIC Amplifiers
Technical Data
Features
MSA-2011
• Surface Mount SOT-143
Package
• 3 dB Bandwidth:
DC to 1.0 GHz
• 16.2 dB Gain at 1 GHz
• 4.3 dB NF at 1 GHz
MSA-2035
• Hermetic Ceramic Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 17.3 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2085
• Plastic Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2086
• Surface Mount Plastic
Microstrip Package
• 3 dB Bandwidth:
DC to 1.1 GHz
• 16.6 dB Gain at 1 GHz
• 3.7 dB NF at 1 GHz
MSA-2011
MSA-2035
MSA-2085
MSA-2086
MSA-20xx Series
Description
The MSA-20xx series are high
performance silicon bipolar RFIC
amplifiers designed to be
cascadable in 50 Ω systems. The
stability factor of K > 1 contributes
to easy cascading in numerous
narrow and broadband IF and RF
commercial and industrial
applications.
The MSA series is fabricated using
a 10 GHz fT, 25 GHz FMAX, silicon
bipolar RFIC process which
utilizes nitride self-alignment, ion
implantation, and gold
metallization to achieve excellent
uniformity, performance, and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Package options include the
industry standard plastic surface
mount SOT-143 package, the
100 mil surface mountable
hermetic ceramic package, the
85 mil plastic microstripline
package, and the 85 mil surface
mountable plastic microstripline
package.
Absolute Maximum Ratings[1]
Parameter
MSA-
2011
Device Current
50 mA
Power Dissipation[2,3]
250 mW[3a]
RF Input Power
+13 dBm
Junction
Temperature
150°C
Storage Temperature -65 to 150°C
MSA-
2035
60 mA
325 mW[3b]
+13 dBm
200°C
-65 to 200°C
MSA-
2085, -2086
60 mA
325 mW[3c]
+13 dBm
150°C
-65 to 150°C
2
Typical Biasing
Configuration
R bias
VCC ≥ 7 V
DC BLOCK
INPUT
1
4
MSA
2
RF CHOKE
3
Vd = 5 V
OUTPUT
Rbias = VCC – Vd
Id
Thermal
Resistance: θjc
500°C/W
155°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3a. Derate at 2.0 mW/°C for TC > 25°C.
b. Derate at 6.5 mW/°C for TC > 149°C.
c. Derate at 8.7 mW/°C for TC > 112°C.
115°C/W
Electrical Specifications, TA = 25°C
ID = 32 mA, Zo = 50 Ω
Symbol
GP
∆GP
f3dB
VSWR
P1dB
NF
IP3
td
Parameters and
Test Conditions
Power Gain
(|S21|2)
f = 0.1 GHz
f = 0.5 GHz
f = 1.0 GHz
Gain Flatness
f = 0.1 to 0.6 GHz
3 dB Bandwidth
Input VSWR
f = 0.1 to 3.0 GHz
Output VSWR
f = 0.1 to 3.0 GHz
Power Output @
1 dB Gain
Compression:
f = 1.0 GHz
50 Ω Noise Figure
f = 1.0 GHz
Third Order
Intercept
Point
f = 1.0 GHz
Group Delay
f = 1.0 GHz
MSA-2011
Units Min. Typ. Max.
dB 18.9
18.1
15.0 16.2
dB ±0.6
GHz 1.0
1.3:1
1.4:1
dBm
dB
9.0
4.3
dBm
psec
22
143
VD Device Voltage
TC = 25°C
V 4.0
dV/dT
Device Voltage
Temperature
Coefficient
mV/°C
Note:
1. Refer to “Tape and Reel Packaging for Surface Mount Devices.”
5.0
-9.3
6.0
MSA-2035
MSA-2085, -2086
Min. Typ. Max. Min. Typ. Max.
17.8 19.2 19.8
19.2
18.7 18.3
17.3 15.0 16.6
±0.4 ±1.0
1.1
±0.6
1.1
1.3:1
1.2:1
1.4:1
1.5:1
9.5 9.0
3.7 3.7
22 22
143 143
4.5 5.0 5.5 4.3 5.0 6.3
-9.3 -9.3
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