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Agilent Technologies |
Agilent MSA-0520
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Description
The MSA-0520 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
BeO disk package for good
thermal characteristics. This
MMIC is designed for use as a
general purpose 50 Ω gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
200 mil BeO Package
Features
• Cascadable 50 Ω Gain Block
• High Output Power:
+23 dBm Typical P1 dB at
1.0 GHz
• Low Distortion:
33 dBm Typical IP3 at 1.0 GHz
• 8.5 dB Typical Gain at
1.0 GHz
• Hermetic Metal/Beryllia
Microstrip Package
Typical Biasing Configuration
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
C block
IN
R bias
VCC > 15 V
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 12 V
OUT
2
MSA-0520 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
225 mA
3.0 W
+25 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 40 mW/°C for TC > 125°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 25°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω
P1 dB
GP
∆GP
f3 dB
Output Power at 1 dB Gain Compression
Power Gain (|S21| 2)
Gain Flatness
3 dB Bandwidth[2]
f = 1.0 GHz
f = 0.1 GHz
f = 0.1 to 2.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
IP3
NF50 Ω
tD
Third Order Intercept Point
50 Ω Noise Figure
Group Delay
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dBm
dB
dB
21.0
7.5
GHz
dBm
dB
psec
V
mV/°C
10.5
Typ. Max.
23.0
8.5
±0.75
2.8
2.0:1
2.5:1
33.0
6.5
170
12.0
–16.0
9.5
13.5
Notes:
1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 0.1 GHz Gain (GP).
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