CGB240 반도체 회로 부품 판매점
2-Stage Bluetooth InGaP HBT Power Amplifier
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 TriQuint Semiconductor |
CGB 240
Datasheet
2-Stage Bluetooth InGaP HBT Power Amplifier
Description:
Applications:
The CGB240 GaAs Power Amplifier MMIC has been
especially developed for wireless applications in the
2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1). Its
high power added efficiency and single positive sup-
ply operation makes the device ideally suited to
handheld applications. The device delivers 23 dBm
output power at a supply voltage of 3.2 V, with an
overall PAE of 50%. The output power can be ad-
justed using an analog control voltage (VCTR). Simple
external input-, interstage-, and output matching cir-
cuits are used to adapt to the different requirements
of linearity and harmonic suppression in various ap-
plications.
For WLAN applications (IEEE802.11b) or appli-
cations serving both WLAN and Bluetooth, we
recommend to use the CGB240B device.
• Bluetooth Class 1
• Cordless Phones
• Home RF
Features:
• Single voltage supply.
• Wide operating voltage range 2.0 - 5.5 V.
• POUT = 23 dBm at VC = 3.2 V.
• Overall power added efficiency (PAE) typi-
cally 50%.
• High PAE at low–power mode.
• Analog power control with four power
steps.
• Straight-Forward Matching; Few external
components.
Package Outline:
1
5
TSMSOSPO-P1-01-02
Pin Configuration:
1 & 2:
3:
4, 5, & 10:
6:
7:
8 & 9:
11 (Paddle):
Vc1
RF In
NC
Vcntrl1
Vcntrl2
Vc2
GND
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 2/13
CGB 240 Datasheet
Absolute Maximum Ratings:
Parameter
Supply voltage- CW
Supply voltage- Pulsed
Power control voltage
DC supply current- Stage 1
DC supply current- Stage 2
Total Power Dissipation1
RF Input Power2
RF Output Power2
Operating case temperature
Storage temperature
Symbol
Vcc
Vcc
Vapc
Icc
Icc
PTOT
PIN, MAX
POUT, MAX
Ta
Ts
Min.
0
0
0
0
0
-20
-55
Max.
5.5
5.0
3.2
40.0
160.0
0.5
+10
+25
85
150
Units
Vdc
Vdc
V
mA
mA
W
dBm
dBm
ºC
ºC
1 Thermal resistance between junction and pad 11 ( = heatsink ): RTHCH = 100 K/W.
2 No RF input signal should be applied before turn-on of DC Power. An output VSWR of 1:1 is as-
sumed.
Electrical Characteristics of CGB240 Device used in Bluetooth PA Reference
Design (See Application Note 1)
TA = 25 °C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN = ZOUT = 50 Ohms
Parameter
Symbol
Limit Values
Unit Test Conditions
min typ max
Supply Current
Small-Signal Operation
Power Gain
Small-Signal Operation
Output Power
Power Step 1
Supply Current
Power Step 1
Power Added Efficiency
Power Step 1
ICC,SS
GSS
POUT,1
ICC,1
PAE 1
125 150 mA PIN = - 10 dBm
VCTR = 2.5 V
23 26
dB PIN = - 10 dBm
VCTR = 2.5 V
7 dBm PIN = + 3 dBm
VCTR = 1.15 V
15 mA PIN = + 3 dBm
VCTR = 1.15 V
10 % PIN = + 3 dBm
VCTR = 1.15 V
For further information please visit www.triquint.com
Rev. 1.6 October 20th, 2004
pg. 3/13
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CGB240 amplifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
CGB240
2-Stage Bluetooth InGaP HBT Power Amplifier - TriQuint Semiconductor
CGB240B
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier - TriQuint Semiconductor