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Hewlett-Packard |
Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1104
Features
• High Dynamic Range
Cascadable 50 Ω or 75 Ω
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.3 GHz
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 12 dB Typical 50 Ω Gain at
0.5 GHz
• 3.6 dB Typical Noise Figure
at 0.5 GHz
• Low Cost Plastic Package
Description
The MSA-1104 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost
plastic package. This MMIC is
designed for high dynamic range
in either 50 or 75 Ω systems by
combining low noise figure with
high IP3. Typical applications
include narrow and broadband
linear amplifiers in commercial
and industrial systems.
04A Plastic Package
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 8 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 5.5 V
OUT
2
MSA-1104 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
550 mW
RF Input Power
+1 dBm
Junction Temperature
Storage Temperature
150°C
–65 to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8.7 mW/°C for TC > 87°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 115°C/W
Electrical Specifications[1], TA = 25°C
Symbol
GP
Parameters and Test Conditions: Id = 60 mA, ZO = 50 Ω
Power Gain (|S21| 2)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
∆GP
f3 dB
Gain Flatness
3 dB Bandwidth[2]
f = 0.1 to 1.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
NF 50 Ω Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3 Third Order Intercept Point
f = 0.5 GHz
tD Group Delay
f = 0.5 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB 10.0
dB
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.4
Typ. Max.
12.7
12.0
10.5
±1.0
1.3
1.5:1
1.7:1
3.6
17.5
30
200
5.5
–8.0
6.6
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
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