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HP |
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0635, -0636
Features
• Cascadable 50 Ω Gain Block
• Low Operating Voltage:
3.5 V Typical Vd
• 3 dB Bandwidth:
DC to 0.9 GHz
• High Gain:
19.0␣ dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0635 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 Ω gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial and industrial
applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0636.
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
Typical Biasing Configuration
R bias
VCC > 5 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 3.5 V
OUT
5965-9585E
6-370
MSA-0635, -0636 Absolute Maximum Ratings
Parameter
Device Current
Absolute Maximum[1]
50 mA
Power Dissipation[2,3]
200 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature[4]
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.5 mW/°C for TC > 169°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,5]:
θjc = 155°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 16 mA, ZO = 50 Ω
GP Power Gain (|S21| 2)
f = 0.1 GHz
∆GP Gain Flatness
f = 0.1 to 2.5 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
NF 50 Ω Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3 Third Order Intercept Point
f = 0.5 GHz
tD Group Delay
f = 0.5 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 19.0
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
3.1
Typ. Max.
20.5
± 0.7
0.9
1.4:1
1.3:1
2.8
2.0
14.5
200
3.5
–8.0
22.0
± 1.0
4.0
3.9
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-371
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