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BC214L 반도체 회로 부품 판매점

PNP General Purpose Amplifier



Fairchild 로고
Fairchild
BC214L 데이터시트, 핀배열, 회로
BC214L
PNP General Purpose Amplifier
• This device is deisgned for use as general purpose amplifiers and
switches requiring collector currents to 300mA.
• Sourced from process 68.
1 TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)-
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
-30
-45
-5.0
-500
- 55 ~ 150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Units
V
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
Collector-Emitter Voltage
V(BR)CBO
Collector-Base Voltage
V(BR)EBO
Emitter-Base Voltage
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
On Characteristics *
IC = -2mA, IB = 0
IC = -10µA, IE = 0
IE = -10µA, IC = 0
VCB = -30V, IE = 0
VEB = -4V, IC = 0
hFE DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
VCE = -5V, IC = -10µA
VCE = -5V, IC = -2mA
VCE = -5V, IC = -100mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5mA
IC = -100mA, IB = -5mA
VCE = -5V, IC = -2mA
fT
Current gain Bandwidth Product
VCE = -5V, IC = -10mA
f = 100MHz
NF Noise Figure
hfe Small Signal Current Gain
VCE = -5V, IC = -200µA
RG = 2k, f = 15.7KHz
IC = -2mA, VCE = -5V
f = 1KHz
COB Output Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VCB = -10V, f = 1MHz
Min. Max. Units
-30 V
-45 V
-5.0 V
-15 nA
-15 nA
100
140 400
120
-0.25
-0.6
-1.1
-0.6 -0.72
V
V
V
200 MHz
2.0 dB
140
10 pF
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003


BC214L 데이터시트, 핀배열, 회로
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003




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BC214L amplifier

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