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Hitachi |
BB503C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-812B(Z)
3rd. Edition
Jul. 1999
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.8 dB typ. at f = 900 MHz
• High gain; PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
Notes:
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
1. Marking is “CS–”.
2. BB503C is individual type number of HITACHI BBFET.
BB503C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
VG2S
Drain current
Channel power dissipation
Channel temperature
Storage temperature
ID
Pch
Tch
Tstg
Ratings
6
+6
–0
+6
–0
20
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate1 to source breakdown V(BR)G1SS
voltage
Gate2 to source breakdown V(BR)G2SS
voltage
Gate1 to source cutoff current IG1SS
Min
6
+6
+6
—
Gate2 to source cutoff current IG2SS
—
Gate1 to source cutoff voltage VG1S(off)
0.5
Gate2 to source cutoff voltage VG2S(off)
0.5
Drain current
I D(op)
7
Forward transfer admittance |yfs|
19
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG
Noise figure
NF
1.4
0.7
—
17
—
Typ Max Unit
——V
——V
——V
— +100 nA
— +100 nA
0.7 1.0 V
0.7 1.0 V
10 13 mA
24 29 mS
1.7
1.1
0.025
22
2.0
1.5
0.05
—
1.8 2.4
pF
pF
pF
dB
dB
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = +10µA
VG1S = VDS = 0
VG1S = +5V
VG2S = VDS = 0
VG2S = +5V
VG1S = VDS = 0
VDS = 5V, VG2S = 4V
ID = 100µA
VDS = 5V, VG1S = 5V
ID = 100µA
VDS = 5V, VG1 = 5V
VG2S = 4V, RG = 47kΩ
VDS = 5V, VG1 = 5V
VG2S =4V
RG = 47kΩ, f = 1kHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 1MHz
VDS = 5V, VG1 = 5V
VG2S =4V, RG = 47kΩ
f = 900MHz
2
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