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PDF BB405 Data sheet ( Hoja de datos )
| Número de pieza | BB405 | |
| Descripción | Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier | |
| Fabricantes | Hitachi | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BB405 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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BB405M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-718A (Z)
2nd. Edition
Dec. 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain;
(PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1 1. Source
2. Drain
3. Gate2
4. Gate1
Notes: 1. Marking is “EX–”.
2. BB405M is individual type number of HITACHI BBFET.
1 page  
Forward Transfer Admittance
vs. Gate1 Voltage
30
V DS = 5 V
R G = 100 k Ω
24 f = 1 kHz
4V
3V
18 2 V
12
6
VG2S = 1 V
0 1 2345
Gate1 Voltage VG1 (V)
BB405M
Power Gain vs. Gate Resistance
40
35
30
25
20
V DS = 5 V
15
V G1= 5 V
V G2S = 4 V
f = 200 MHz
10
10 20 50
100 200
500 1000
Gate Resistance R G (k Ω )
Noise Figure vs. Gate Resistance
4
V DS = 5 V
V G1= 5 V
3 V G2S = 4 V
f = 200 MHz
2
1
0
10 20
50 100 200 500 1000
Gate Resistance RG (k Ω)
Power Gain vs. Drain Current
40
35
30
25
20 V DS = 5 V
V G1= 5 V
15
V G2S = 4 V
RG= variable
f = 200 MHz
10
0 5 10 15 20 25 30
Drain Current ID (mA)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet BB405.PDF ] | |
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