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Hitachi |
BB304M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
ADE-208-605C (Z)
4th. Edition
August 1998
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Note: 1. Marking is “DW–”.
2. BB304M is individual type number of HITACHI BBFET.
BB304M
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
Symbol
VDS
VG1S
VG2S
ID
Pch
Tch
Tstg
Ratings
12
+10
–0
±10
25
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS
Gate1 to source breakdown voltage V(BR)G1SS
Gate2 to source breakdown voltage V(BR)G2SS
Gate1 to source cutoff current
I G1SS
Gate2 to source cutoff current
I G2SS
Gate1 to source cutoff voltage
VG1S(off)
12
+10
±10
—
—
0.4
—
—
—
—
—
—
Gate2 to source cutoff voltage
VG2S(off)
0.5
—
—
—
—
+100
±100
1.0
V
V
V
nA
nA
V
1.0 V
ID = 200µA, VG1S = VG2S = 0
IG1 = +10µA, VG2S = VDS = 0
IG2 = ±10µA, VG1S = VDS = 0
VG1S = +9V, VG2S = VDS = 0
VG2S = ±9V, VG1S = VDS = 0
VDS = 5V, VG2S = 4V
ID = 100µA
VDS = 5V, VG1S = 5V
ID = 100µA
2
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