|
Hitachi |
BB302C
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-573 A (Z)
2nd. Edition
September 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB302C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown
voltage
V(BR)DSS
Gate1 to source breakdown
voltage
V(BR)G1SS
Gate2 to source breakdown
voltage
V(BR)G2SS
Gate1 to source cutoff current IG1SS
Min
12
+10
±10
—
Typ
—
—
—
—
Ratings
12
+10
–0
±10
25
100
150
–55 to +150
Max Unit
—V
—V
—V
+100 nA
Gate2 to source cutoff current IG2SS
— — ±100 nA
Gate1 to source cutoff voltage VG1S(off) 0.4 —
1.0 V
Gate2 to source cutoff voltage VG2S(off) 0.4 —
1.0 V
Drain current
I D(op)
9 13 18 mA
Forward transfer admittance |yfs|
15 20 — mS
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG
Noise figure
NF
2.2 3.0 4.0 pF
0.8 1.1 1.5 pF
— 0.017 0.04 pF
22 26 — dB
— 1.7 2.2 dB
Unit
V
V
V
mA
mW
°C
°C
Test Conditions
ID = 200µA
VG1S = VG2S = 0
IG1 = +10µA
VG2S = VDS = 0
IG2 = ±10µA
VG1S = VDS = 0
VG1S = +9V
VG2S = VDS = 0
VG2S = ±9V
VG1S = VDS = 0
VDS = 9V, VG2S = 6V
ID = 100µA
VDS = 9V, VG1S = 9V
ID = 100µA
VDS = 9V, VG1 = 9V
VG2S = 6V
RG = 120kΩ
VDS = 9V, VG1 = 9V
VG2S =6V
RG = 120kΩ, f = 1kHz
VDS = 9V, VG1 = 9V
VG2S =6V, RG = 120kΩ
f = 1MHz
VDS = 9V, VG1 = 9V
VG2S =6V
RG = 120kΩ
f = 200MHz
|