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Hitachi |
BB102C
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
ADE-208-588 (Z)
1st. Edition
November 1997
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 2.1 dB typ. at f = 900 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; CMPAK-4(SOT-343mod)
Outline
CMPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
• Note 1 Marking is “BW–”.
• Note 2 BB302C is individual type number of HITACHI BBFET.
BB102C
Absolute Maximum Ratings (Ta = 25°C)
Item
Drain to source voltage
Gate1 to source voltage
Symbol
VDS
VG1S
Gate2 to source voltage
Drain current
Channel power dissipation
Channel temperature
Storage temperature
VG2S
ID
Pch
Tch
Tstg
Electrical Characteristics (Ta = 25°C)
Ratings
12
+10
–0
±10
25
100
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 12
Gate1 to source breakdown V(BR)G1SS +10
voltage
Gate2 to source breakdown V(BR)G2SS ±10
voltage
Gate1 to source cutoff current IG1SS
Gate2 to source cutoff current IG2SS
Gate1 to source cutoff voltage VG1S(off)
Gate2 to source cutoff voltage VG2S(off)
Drain current
I D(op)
—
—
0.1
0.5
10
Forward transfer admittance |yfs|
16
Input capacitance
c iss
Output capacitance
c oss
Reverse transfer capacitance crss
Power gain
PG
Noise figure
NF
1.2
0.7
—
16
—
Typ Max Unit Test Conditions
— — V ID = 200µA, VG1S = VG2S = 0
— — V IG1 = +10µA, VG2S = VDS = 0
— — V IG2 = ±10µA, VG1S = VDS = 0
— +100 nA
— ±100 nA
— 0.8 V
— 1.1 V
15 20 mA
21 — mS
1.6
1.1
0.011
20
2.1
2.2
1.5
0.03
—
3.1
pF
pF
pF
dB
dB
VG1S = +9V, VG2S = VDS = 0
VG2S = ±9V, VG1S = VDS = 0
VDS = 9V, VG2S = 6V, ID = 100µA
VDS = 9V, VG1S = 9V, ID = 100µA
VDS = 9V, VG1 = 9V, VG2S = 6V
RG = 560kΩ
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 560kΩ, f = 1kHz
VDS = 9V, VG1 = 9V
VG2S =6V, RG = 560kΩ
f = 1MHz
VDS = 9V, VG1 = 9V, VG2S =6V
RG = 120kΩ, f = 900MHz
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