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PDF SE103 Data sheet ( Hoja de datos )

Número de pieza SE103
Descripción LightCharger 2.5 Gb/s Transimpedance Amplifier LP Final
Fabricantes SiGe Semiconductor Inc. 
Logotipo SiGe Semiconductor  Inc. Logotipo



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No Preview Available ! SE103 Hoja de datos, Descripción, Manual

SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
Applications
§ SONET/SDH-based transmission systems, test
equipment and modules
§ OC-48 fibre optic modules and line termination
§ ATM optical receivers
§ Gigabit Ethernet
§ Fibre Channel
Features
§ Single +3.3 V power supply
§ Input noise current = 360 nA rms when used with
a 0.5 pF detector
§ Transimpedance gain = 2.3 kinto a 50 load
(differential)
§ On-chip automatic gain control gives input
current overload of 2.6 mA pk and max output
voltage swing of 300 mV pk-pk
§ Differential 50 outputs
§ Bandwidth (-3 dB) = 2.4 GHz
§ Wide data rate range = 50 Mb/s to 2.5 Gb/s
§ Constant photodiode reverse bias voltage = 1.5 V
(anode to input, cathode to VCC)
§ Minimal external components, supply decoupling
only
§ Operating junction temperature range = -40°C to
+125°C
§ Equivalent to Nortel Networks AB89-A2A
Ordering Information
Type
SE1030W
Package
Bare Die
Remark
Shipped in
Waffle Pack
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance optical
transmitter and receiver functions, from 155 Mb/s up
to 12.5 Gb/s.
SiGe Semiconductor’s SE1030W is a fully integrated,
silicon bipolar transimpedance amplifier; providing
wideband, low noise preamplification of signal current
from a photodetector. It features differential outputs,
and incorporates an automatic gain control
mechanism to increase dynamic range, allowing input
signals up to 2.6 mA peak. A decoupling capacitor on
the supply is the only external circuitry required. A
system block diagram is shown after the functional
description, on page 3.
Noise performance is optimized for 2.5 Gb/s
operation, with a calculated rms noise based
sensitivity of –26 dBm for 10-10 bit error rate, achieved
using a detector with 0.5 pF capacitance and a
responsivity of 0.9 A/W, with an infinite extinction ratio
source.
SE1030
TzAmp
2.5 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator
Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50
50
OUTP
OUTN
43-DST-01 § Rev 1.5 § May 24/02
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SE103 pdf
SE1030W
LightCharger2.5 Gb/s Transimpedance Amplifier
Final
AC Electrical Characteristics
Symbol
Parameter
Min Typ Max
BW (3dB) Small Signal Bandwidth at –3dB point
1.8 2.4
Tz
Differential Transimpedance (50 on each output,
1.6
2.3
3.1
f = 100 MHz)
Dri Input Data Rate
50 2500
Voutmax
Flf
Maximum Differential Output Voltage
Low Frequency Cut-off
300
5
lOL
Pol
Nrms
Input Current before overload (2.5 Gb/s NRZ data)
Optical Overload
Input Noise Current (in 2 GHz)
2600
+1.6
360
500
DC and AC electrical characteristics are specified under the following conditions:
Supply Voltage (VCC).........................................3.1 V to 3.5 V
Junction Temperature (Tj)..................................–40°C to 125°C
Load Resistor (RL)...............................................50 AC coupled via 220 nF, for each output
Photodetector Capacitance (Cd).......................0.5 pF
Input bond wire inductance................................1 nH
Photodetector responsivity.................................0.9 A/W
Transimpedance (Tz) measured with 4 µA mean photocurrent
Unit
GHz
k
Mb/s
mV pk-pk
kHz
µA pk-pk
dBm
nA rms
43-DST-01 § Rev 1.5 § May 24/02
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