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PDF SE1020W Data sheet ( Hoja de datos )
| Número de pieza | SE1020W | |
| Descripción | 1.25 Gb/s Transimpedance Amplifier Product Preview | |
| Fabricantes | SiGe Semiconductor Inc. | |
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Hay una vista previa y un enlace de descarga de SE1020W (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
Applications
Gigabit-Ethernet systems, test equipment
and modules
OC-24 fibre optic modules and line
termination
Fibre Channel optical systems
Features
Single +3.3 V power supply
Power dissipation = 110 mW (typ)
Input noise current = 180 nA rms when used
with a 0.7 pF detector
Transimpedance gain = 4.0 kΩ into a 50 Ω
load (differential)
On-chip automatic gain control gives input
current overload of 2.6 mA pk and max
output voltage swing of 300 mV pk-pk
Differential 50 Ω outputs
Bandwidth (-3 dB) = 1.2 GHz
Wide data rate range = 50 Mb/s to 1.25 Gb/s
Constant photodiode reverse bias voltage =
1.5 V (anode to input, cathode to VCC)
Minimal external components, supply
decoupling only
Operating junction temperature range =
-40°C to +125°C
Ordering Information
Type
SE1020W
Package
Bare Die
Remark
None
Functional Block Diagram
Product Description
SiGe Semiconductor offers a portfolio of optical
networking ICs for use in high-performance
optical transmitter and receiver functions, from
155 Mb/s up to 12.5 Gb/s.
SiGe Semiconductor’s SE1020W is a fully
integrated, silicon bipolar transimpedance
amplifier; providing wideband, low noise
preamplification of signal current from a
photodetector. It features differential outputs and
incorporates an automatic gain control
mechanism to increase dynamic range, allowing
input signals up to 2.6 mA peak. A decoupling
capacitor on the supply is the only external
circuitry required. A system block diagram is
shown after the functional description, on page 3.
SE1020
TzAmp
1.25 Gb/s
VCC or +ve supply
Automatic Gain Control
Integrator Rectifier
Input
Current
TZ_IN
Rf
Tz Amp
Bandgap
Reference
Output
Driver
50 Ω
50 Ω
OUTP
OUTN
42-DST-01 Rev 1.3 May 27/02
Confidential
1 of 7
1 page  
SE1020W
1.25 Gb/s Transimpedance Amplifier
Product Preview
AC Electrical Characteristics
Symbol Parameter
Min Typ Max
BW (3dB) Small Signal Bandwidth at –3dB point
0.95
1.2
Tz
Differential Transimpedance (50 Ω on
each output, f = 100 MHz)
2.9
4.0
5.4
Dri Input Data Rate
50 1250
Voutmax Maximum Differential Output Voltage
300
Flf Low Frequency Cut-off
10 20
lOL
Input Current before overload
(1.25 Gb/s NRZ data)
2600
Pol Optical Overload
+3.3
Nrms
Input Noise Current (in 1 GHz)
180 255
DC and AC electrical characteristics are specified under the following conditions:
Supply Voltage (VCC) ................................... 3.1 V to 3.5 V
Junction Temperature (Tj) ............................. –40°C to 125°C
Load Resistor (RL) ......................................... 50 Ω AC coupled via 220 nF, for each output
Photodetector Capacitance (Cd) ................... 0.7 pF
Input bond wire inductance............................ 1 nH
Photodetector responsivity ............................ 0.6 A/W
Transimpedance (Tz) measured with 4 µA mean photocurrent
Unit
GHz
kΩ
Mb/s
mV pk-pk
kHz
µA pk-pk
dBm
nA rms
42-DST-01 Rev 1.3 May 27/02
Confidential
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SE1020W.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SE1020W | 1.25 Gb/s Transimpedance Amplifier Product Preview | SiGe Semiconductor Inc. |
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