NZT6729 반도체 회로 부품 판매점

PNP General Purpose Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT6729 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
TN6729A
NZT6729
C
BE
TO-226
C
SOT-223
E
C
B
PNP General Purpose Amplifier
This device is designed for general purpose medium power
amplifiers and switches requiring collector currents to 800 mA.
Sourced from Process 79.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
80
VCBO
Collector-Base Voltage
80
VEBO
Emitter-Base Voltage
5.0
IC
TJ, Tstg
Collector Current - Continuous
Operating and Storage Junction Temperature Range
1.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
TN6729A
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
1.0
8.0
50
RθJA Thermal Resistance, Junction to Ambient
125
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T6729
1.0
8.0
125
Units
V
V
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

NZT6729 데이터시트, 핀배열, 회로
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
V(BR)EBO
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 1.0 mA, IB = 0
IC = 100 µA, IE = 0
IE = 1.0 mA, IC = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
80 V
80 V
5.0 V
0.1 µA
10 µA
ON CHARACTERISTICS*
hFE DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 50 mA, VCE = 1.0 V
IC = 250 mA, VCE = 1.0 V
IC = 500 mA, VCE = 1.0 V
IC = 250 mA, IB = 10 mA
IC = 250 mA, IB = 25 mA
IC = 250 mA, VCE = 1.0 V
80
50 250
20
0.5
0.35
1.2
V
V
V
SMALL SIGNAL CHARACTERISTICS
hfe Small-Signal Current Gain
Ccb Collector-Base Capacitance
IC = 200 mA, VCE = 5.0 V,
f = 20 MHz
2.5 25
VCB = 10 V, IE = 0, f = 1.0 MHz
30 pF
*Pulse Test: Pulse Width 300 µs, Duty Cycle 1.0%
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
150
VCE = 1.0 V
100
25 °C
50 - 40 °C
0
0.01
0.02 0.05 0.1
0.5
I C - COLLECTOR CURRENT (mA)
P9
1
Collector-Emitter Saturation
Voltage vs Collector Current
2
1 β = 10
25 °C
0.1 - 40 ºC
125 ºC
0.01
10
100
I C - COLLECTOR CURRENT (mA)
P 79
1000




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NZT6729 amplifier

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