NZT44H8 반도체 회로 부품 판매점

NPN Power Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
NZT44H8 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
D44H8
NZT44H8
B
CE
TO-220
C
SOT-223
E
C
B
NPN Power Amplifier
This device is designed for power amplifier, regulator and switching
circuits where speed is important. Sourced from Process 4Q.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
60
8.0
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
D44H8
PD Total Device Dissipation
Derate above 25°C
RθJC Thermal Resistance, Junction to Case
60
480
2.1
RθJA Thermal Resistance, Junction to Ambient
62.5
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
*NZ T44H8
1.5
12
83.3
Units
V
A
°C
Units
W
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation

NZT44H8 데이터시트, 핀배열, 회로
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
NPN Power Amplifier
(continued)
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
ICBO Collector-Cutoff Current
IEBO Emitter-Cutoff Current
IC = 100 mA, IB = 0
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
IC = 2.0 A, VCE = 1.0 V
IC = 4.0 A, VCE = 1.0 V
IC = 8.0 A, IB = 0.4 A
IC = 8.0 A, IB = 0.8 A
IC = 10 mA, VCE = 2.0 V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
IC = 500 mA, VCE = 10 V,
60 V
10 µA
100 µA
60
40
1.0
1.5
0.52 0.65
V
V
V
50 MHz
DC Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
200
125 °C
Vce = 5V
150
100 25 °C
50
- 40 °C
0
0.01 0.02 0.05 0.1 0.2 0.5 1 2
5 10
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.8
β = 10
0.6
0.4
0.2
0
0.1
- 40 ºC
25 °C
125 ºC
1
I C - COLLECTOR CURRENT (A)
P 4Q
10




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NZT44H8 amplifier

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NZT44H8

NPN Power Amplifier - Fairchild Semiconductor