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NE33284A-SL 반도체 회로 부품 판매점

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET



NEC 로고
NEC
NE33284A-SL 데이터시트, 핀배열, 회로
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for GPS,
TVRO and another commercial systems.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 µm
ORDERING INFORMATION
SUPPLYING
PART NUMBER
LEAD LENGTH
FORM
NE33284A-SL
STICK
L = 1.7 mm MIN.
NE33284A-T1
NE33284A-T1A
Tape & reel L = 1.0 ±0.2 mm
PACKAGE DIMENSIONS
(Unit: mm)
1.78 ±0.2
1
L
L
U
2
L
3
L
4
0.5 TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDS
4.0
V
Gate to Source Voltage
VGS
–3.0
V
Drain Current
ID
IDSS
mA
Total Power Dissipation
Ptot
165 mW
Channel Temperature
Tch 150 ˚ C
Storage Temperature
Tstg –65 to +150 ˚ C
RECOMMENDED OPERATING CONDITION (TA = 25 ˚C)
1. Source
2. Drain
3. Source
4. Gate
CHARACTERISTIC
Drain to Source Voltage
Drain Current
Input Power
SYMBOL
VDS
ID
Pin
MIN.
TYP.
2
10
MAX.
3
20
0
Unit
V
mA
dBm
Document No. P10874EJ2V0DS00 (2nd edition)
(Previous No. TD-2369)
Date Published October 1995 P
Printed in Japan
© 1995


NE33284A-SL 데이터시트, 핀배열, 회로
NE33284A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
SYMBOL
IGSO
IDSS
VGS(off)
gm
NF
MIN.
15
–0.2
45
Ga 9.5
13.0
TYP.
0.5
40
–0.8
70
0.75
0.35
10.5
15.0
MAX.
10
80
–2.0
1.0
0.45
UNIT
µA
mA
V
mS
dB
dB
TEST CONDITIONS
VGS = –3 V
VDS = 2 V, VGS = 0
VDS = 2 V, ID = 100 µA
VDS = 2 V, ID = 10 mA
f = 12 GHz
f = 4 GHz
VDS = 2 V
ID = 10 mA
f = 12 GHz
f = 4 GHz
PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect
transistor with AlGaAs shottky barrier gate.
2




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NE33284A-SL amplifier

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NE33284A-SL

L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET - NEC