파트넘버.co.kr PN100 데이터시트 PDF


PN100 반도체 회로 부품 판매점

NPN General Purpose Amplifier



Fairchild Semiconductor 로고
Fairchild Semiconductor
PN100 데이터시트, 핀배열, 회로
Discrete POWER & Signal
Technologies
PN100
PN100A
MMBT100
MMBT100A
C
C
BE
TO-92
SOT-23
Mark: NA / NA1
B
E
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
45
VCBO
Collector-Base Voltage
75
VEBO
Emitter-Base Voltage
6.0
IC Collector Current - Continuous
500
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA= 25°C unless otherwise noted
Symbol
Characteristic
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
PN100A
625
5.0
83.3
200
*MMBT100A
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation


PN100 데이터시트, 핀배열, 회로
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA= 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
BVCBO
Collector-Base Breakdown Voltage
BVCEO
Collector-Emitter Breakdown Voltage*
BVEBO
Emitter-Base Breakdown Voltage
ICBO Collector Cutoff Current
ICES Collector Cutoff Current
IEBO Emitter Cutoff Current
IC = 10 µA, IB = 0
IC = 1 mA, IE = 0
IE = 10 µA, IC = 0
VCB = 60 V
VCE = 40 V
VEB = 4 V
75 V
45 V
6.0 V
50 nA
50 nA
50 nA
ON CHARACTERISTICS
hFE DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 100 µA, VCE = 1.0 V
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V*
IC = 150 mA, VCE = 5.0 V*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
IC = 10 mA, IB = 1.0 mA
IC = 200 mA, IB = 20 mA*
100
100A
100
100A
100
100A
80
240
100
300
100
100
100
450
600
350
0.2
0.4
0.85
1.0
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product
Cobo
NF
Output Capacitance
Noise Figure
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VCE = 20 V, IC = 20 mA
VCB = 5.0 V, f = 1.0 MHz
IC = 100 µA, VCE = 5.0 V,
RG = 2.0 k, f = 1.0 kHz
100
100A
250
MHz
4.5 pF
5.0 dB
4.0 dB
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
400
125 °C
300
Vce = 5V
25 °C
200
- 40 °C
100
0
10
20 30 50
100 200 300 500
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
25 °C
0.2
0.1
125 °C
- 40 °C
1 10 100 400
I C - COLLECTOR CURRENT (mA)




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PN100 amplifier

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