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8508701ZX 반도체 회로 부품 판매점

0.1 Amp Power Operational Amplifier



Elantec Semiconductor 로고
Elantec Semiconductor
8508701ZX 데이터시트, 핀배열, 회로
ELH0041G 883 8508701ZX
0 1 Amp Power Operational Amplifier
Features
 High output current 200 mA
 Excellent open-loop
gain 106 dB
 Low offset voltage 1 mV
 Wide full power
bandwidth 20 kHz
 High slew rate 3 V ms
 MIL-STD-883 devices 100%
manufactured in U S A
Ordering Information
Part No
Temp Range Pkg Outline
ELH0041G 883B b55 C to a125 C TO-8 MDP002
8508701ZX is the SMD version of this device
Connection Diagram
Top View
Burn-In Circuit
0041 – 1
General Description
The ELH0041 are general purpose operational amplifiers capa-
ble of delivering large output currents not usually associated
with conventional IC op amps the ELH0041 delivers currents
of 200 mA at voltage levels closely approaching the available
power supplies In addition both the inputs and outputs are
protected against overload These devices are compensated with
a single external capacitor and are free of any unusual oscilla-
tion or latch-up problems
For applications requiring output currents in excess of 1A see
the ELH0021 data sheet
The excellent input characteristics and high output capability
of the ELH0041 make it an ideal choice for power applications
such as DC servos capstan drivers deflection yoke drivers and
programmable power supplies
The ELH0041 is particularly suited for applications such as
torque drivers for inertial guidance systems diddle yoke drivers
for alphanumeric CRT displays cable drivers and programma-
ble power supplies for automatic test equipment
Elantec facilities comply with MIL-I-45208A and other applica-
ble quality specifications Elantec’s Military devices are 100%
fabricated and assembled in our rigidly controlled ultra-clean
facilities in Milpitas California For additional information on
Elantec’s Quality and Reliability Assurance policy and proce-
dures request brochure QRA-1
Equivalent Schematic
0041 – 2
0041 – 3
Note All information contained in this data sheet has been carefully checked and is believed to be accurate as of the date of publication however this data sheet cannot be a ‘‘controlled document’’ Current revisions if any to these
specifications are maintained at the factory and are available upon your request We recommend checking the revision level before finalization of your design documentation Patent pending
1989 Elantec Inc


8508701ZX 데이터시트, 핀배열, 회로
ELH0041G 883 8508701ZX
0 1 Amp Power Operational Amplifier
Absolute Maximum Ratings (TA e 25 C)
VS Supply Voltage
VIN Input Voltage (Note 1)
PD Power Dissipation (See curves)
Differential Input Voltage
g18V
g15V
g30V
Peak Output Current (Note 2)
0 5A
Output Short Circuit
Duration (Note 3)
Continuous
TA
TST
Operating Temperature Range
ELH0041
Storage Temperature
Lead Temperature
(Soldering 10 seconds)
b55 C to a125 C
b65 C to a150 C
300 C
Important Note
All parameters having Min Max specifications are guaranteed The Test Level column indicates the specific device testing actually
performed during production and Quality inspection Elantec performs most electrical tests using modern high-speed automatic test
equipment specifically the LTX77 Series system Unless otherwise noted all tests are pulsed tests therefore TJeTCeTA
Test Level
I
II
III
IV
V
Test Procedure
100% production tested and QA sample tested per QA test plan QCX0002
100% production tested at TA e 25 C and QA sample tested at TA e 25 C
TMAX and TMIN per QA test plan QCX0002
QA sample tested per QA test plan QCX0002
Parameter is guaranteed (but not tested) by Design and Characterization Data
Parameter is typical value at TA e 25 C for information purposes only
DC Electrical Characteristics VS e g15V TMIN s TA s TMAX CC e 3000 pF
Parameter
Description
Test Conditions
Min
ELH0041
Typ Max
VOS
DVOS DT
DVOS DP
IOS
IB
RIN
Input Offset Voltage
Voltage Drift
with Temperature
RS s 100X TA e 25 C (Note 4)
RS s 100X (Note 4)
RS s 100X
13
5
3
Offset Voltage Drift
with Time
TA e 25 C
5
Offset Voltage
Change with
Output Power
15
Offset Voltage
Adjustment Range
20
Input Offset Current
TA e 25 C (Note 4)
(Note 4)
30 100
300
Offset Current Drift
with Temperature
01 1
Offset Current Drift
with Time
TA e 25 C
2
Input Bias
Current
TA e 25 C (Note 4)
(Note 4)
100 300
1
Input Resistance
TA e 25 C
03 1
Test
Level
I
I
V
V
V
V
I
I
IV
V
I
I
I
Units
mV
mV
mV C
mV 0wk
mV W
mV
nA
nA
nA C
nA 0wk
nA
mA
MX
2




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8508701ZX

0.1 Amp Power Operational Amplifier - Elantec Semiconductor