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Applications
Two-Way Paging
Wireless Modems
Cordless Telephones
Telemetry
900 MHz ISM
VDD1
N/C
GND
GND
RF IN
GND
GND
N/C
3.6V 1.2W RF Power Amplifier IC
for N-PCS/ISM900
MA02104AF
Features
•= Single Positive Supply
•= 16 Pin TSSOP Plastic Package
•= Class AB Bias
•= 800 - 1000 MHz Operation
•= 50Ω Input Impedance
•= Single Capacitor Output Match
•= Self-Aligned MSAG®-Lite MESFET Process
•= Guaranteed Stability and Ruggedness
VDD2
GND
GND
GND
RF OUT/VDD3
GND
GND
N/C
Typical 3.6 Volt Performance
30.8 dBm Power Output
30.8 dB Power Gain
60% Drain Efficiency (output stage FET)
45% Power Added Efficiency
-36 dBc 2nd Harmonic
-54 dBc 3rd Harmonic
ELECTRICAL CHARACTERISTICS VDD=3.6 V, PIN=0 dBm, TS=40 °C (Note 1), Output externally matched to 50 Ω System.
Characteristic
Symbol
Min
Typical Max
Unit
Frequency Range
ƒ 900
942 MHz
Output Power, f = 900 MHz
Power Added Efficiency , f = 900 MHz
POUT
η
30.4
40
30.9
45
31.5
dBm
%
Harmonics
2ƒo
−36 -31
dBc
3ƒo
−54 -40
dBc
Input VSWR
—
1.4:1 2.0:1
—
Thermal Resistance (Junction of 3rd stage FET to solder point of RTH J-S 47 °C/W
pin 13)
Load Mismatch (VDD = 4.6 V, PIN = +3 dBm, VSWR = 8:1)
—
No Degradation in Power Output
Stability (PIN = -15 to +3 dBm, VDD = 3.6, 4.6 V, TS = -40 to +100 °C,
Load VSWR = 8:1)
—
All non-harmonically related outputs
more than 60 dB below desired signal
Note 1: TS is the temperature measured at the soldering point of pin 13, mounted on 60 mil GETEK evaluation board in a free air condition with
ambient room temperature TA=25 °C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 and 6,
under room temperature conditions and CW operation, unless otherwise specified.
Specifications subject to change without notice.
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
901753 G
ww3w.6.DVat1a.S2hWeetR4FU.Pcoomwer Amplifier IC for N-PCS/ISM900
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
Rating
DC Supply Voltage (Pins 1, 12, 16)
RF Input Power
Junction Temperature
Storage Temperature Range
APPLICATION INFORMATION
+VDD (+3.6V)
Symbol
VDD
PIN
TJ
TSTG
RF INPUT
C3
1
N/C 2
3
4
5
6
7
N/C 8
C1 C2
16
15
14
13
12 T1
11
10
9 N/C
Figure 1. Evaluation Board Schematic
MA02104AF
Value
5
4
150
-40 to +150
Unit
Vdc
mW
°C
°C
L1
RF OUTPUT
C5
C4
List of components:
C1 = 0.1µF Kemet multilayer ceramic chip capacitor (C1206C104K5RAC)
C2 = 4700 pF Kemet multilayer ceramic chip capacitor (C0805C472K5RAC)
C4 = 7.5 pF DLI multilayer ceramic chip capacitor (C11AH7R5B5TXL)
C3 = C5 = 100 pF DLI multilayer ceramic chip capacitor (DC Block; C11AH101K5TXL)
L1 = 39 nH Coilcraft chip inductor (1008CS.390XMBB)
T1 = 0.13" of 50 Ω==grounded coplanar waveguide (60 mil GETEK board)
Component layout and printed circuit board drawing for RF IC evaluation board are shown in Figure 6.
Specifications subject to change without notice.
North America: Tel. (800)366-2266, Fax (800)618-8883
Asia/Pacific: Tel. +81-44-844-8296, Fax +81-44-844-8298
Europe: Tel. +44 (1344) 869 595, Fax +44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information
901753 G
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