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PF0414 반도체 회로 부품 판매점

MOS FET Power Amplifier Module for DCS 1800 Handy Phone



Hitachi Semiconductor 로고
Hitachi Semiconductor
PF0414 데이터시트, 핀배열, 회로
PF0414A
MOS FET Power Amplifier Module
for DCS 1800 Handy Phone
Application
For DCS 1800 class1 1710 to 1785 MHz.
Features
3stage amplifier
Small package: 0.2cc
High efficiency: 45% Typ
High speed switching: 0.9 µsec
Pin Arrangement
RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
ADE-208-431B (Z)
3rd Edition
December 1997
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
11
3
6
20
–30 to +100
–30 to +100
3
Unit
V
A
V
mW
°C
°C
W


PF0414 데이터시트, 핀배열, 회로
PF0414A
Electrical Characteristics (Tc = 25°C)
Item
Frequency range
Control voltage range
Drain cutoff current
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Output power (1)
Symbol
f
VAPC
I DS
ηT
2nd H.D.
3rd H.D.
VSWR (in)
Pout (1)
Output power (2)
Pout (2)
Isolation
Switching time
tr, tf
Stability
Min
1710
0.5
37
2.0
Typ
45
–45
–45
1.5
2.4
Max
1785
3
100
–35
–35
3
Unit
MHz
V
µA
%
dBc
dBc
W
1.2 1.5 —
W
— –40 –30 dBm
— 0.9 2
µs
No parasitic oscillation —
Test Condition
VDD = 11 V, VAPC = 0 V
Pin = 2 mW, VDD = 4.8 V,
Pout = 1.8 W (at APC controlled),
RL = Rg = 50 , Tc = 25°C
Pin = 2 mW, VDD = 4.8 V,
VAPC = 3 V, RL = Rg = 50 ,
Tc = 25°C
Pin = 2 mW, VDD = 4.3 V,
VAPC = 3 V, RL = Rg = 50 ,
Tc = 80°C
Pin = 2 mW, VDD = 4.8 V,
VAPC = 0.5 V, RL = Rg = 50 ,
Tc = 25°C
Pin = 2 mW, VDD = 4.8 V,
Pout = 1.8 W, RL = Rg = 50 ,
Tc = 25°C
Pin = 2 mW, VDD = 6 V,
Ids 0.9 A (only pulsed),
Pout 1.8 W (at APC controlled),
Rg = 50 , t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
2




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PF0414 amplifier

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