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Hitachi Semiconductor |
PF0414A
MOS FET Power Amplifier Module
for DCS 1800 Handy Phone
Application
For DCS 1800 class1 1710 to 1785 MHz.
Features
• 3stage amplifier
• Small package: 0.2cc
• High efficiency: 45% Typ
• High speed switching: 0.9 µsec
Pin Arrangement
• RF-K
4 GG 3
G2
1G
1: Pin
2: Vapc
3: Vdd
4: Pout
G: GND
ADE-208-431B (Z)
3rd Edition
December 1997
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
VAPC voltage
Input power
Operating case temperature
Storage temperature
Output power
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Pout
Rating
11
3
6
20
–30 to +100
–30 to +100
3
Unit
V
A
V
mW
°C
°C
W
PF0414A
Electrical Characteristics (Tc = 25°C)
Item
Frequency range
Control voltage range
Drain cutoff current
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
Input VSWR
Output power (1)
Symbol
f
VAPC
I DS
ηT
2nd H.D.
3rd H.D.
VSWR (in)
Pout (1)
Output power (2)
Pout (2)
Isolation
—
Switching time
tr, tf
Stability
—
Min
1710
0.5
—
37
—
—
—
2.0
Typ
—
—
—
45
–45
–45
1.5
2.4
Max
1785
3
100
—
–35
–35
3
—
Unit
MHz
V
µA
%
dBc
dBc
—
W
1.2 1.5 —
W
— –40 –30 dBm
— 0.9 2
µs
No parasitic oscillation —
Test Condition
VDD = 11 V, VAPC = 0 V
Pin = 2 mW, VDD = 4.8 V,
Pout = 1.8 W (at APC controlled),
RL = Rg = 50 Ω, Tc = 25°C
Pin = 2 mW, VDD = 4.8 V,
VAPC = 3 V, RL = Rg = 50 Ω,
Tc = 25°C
Pin = 2 mW, VDD = 4.3 V,
VAPC = 3 V, RL = Rg = 50 Ω,
Tc = 80°C
Pin = 2 mW, VDD = 4.8 V,
VAPC = 0.5 V, RL = Rg = 50 Ω,
Tc = 25°C
Pin = 2 mW, VDD = 4.8 V,
Pout = 1.8 W, RL = Rg = 50 Ω,
Tc = 25°C
Pin = 2 mW, VDD = 6 V,
Ids ≤ 0.9 A (only pulsed),
Pout ≤ 1.8 W (at APC controlled),
Rg = 50 Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases
2
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