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Hitachi Semiconductor |
PF0121
MOS FET Power Amplifier Module for GSM Mobile Phone
Application
For GSM CLASS2 890 to 915 MHz
Features
• Low power control current: 0.9 mA Typ
• High speed switching: 1.5 µsec Typ
• Wide power control range: 100 dB Typ
Pin Arrangement
• RF-B2
2
51
ADE-208-097A (Z)
2nd Edition
July 1996
5
4
3
1: Pin
2: VAPC
3: VDD
4: Pout
5: GND
PF0121
Internal Diagram and External Circuit
G
GND
Pin1
Pin
Z1
Pin2
VAPC
FB1
Pin3
VDD
G
GND
Pin4
Pout
C2
FB2 C1
Z2
Pin VAPC
VDD
C1 = 0.01 µF (Ceramic chip capacitor)
C2 = 330 µF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)
Pout
Absolute Maximum Ratings (Tc = 25°C)
Item
Supply voltage
Supply current
APC voltage
Input power
Operating case temperature
Storage temperature
Symbol
VDD
I DD
VAPC
Pin
Tc (op)
Tstg
Rating
17
6
8
20
–30 to +110
–40 to +110
Unit
V
A
V
mW
°C
°C
2
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